Robustness of SiC JFET in Short-Circuit Modes

Boughrara, Narjes; Moumen, Sabrine; Lefebvre, Stéphane; Khatir, Zoubir; Friedrichs, Peter; Faugières, J.C.

doi:10.1109/led.2008.2008668

Cited by 37 publications

(18 citation statements)

References 7 publications

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“…Previous results on SiC JFET transistors (normally on) have already shown high robustness to current limitation operations and very good performances at very high temperature [5,6].…”

Section: Introductionmentioning

confidence: 93%

“…Previous studies have already shown the excellent robustness of SiC JFETs under these severe operation conditions in the case of a long term current limitation operation. For these studies, JFETs were used as current limiters with a gate-to-source voltage equal to zero [5,6]. This paper focuses on the behaviour of SiC JFETs under repetitive short circuit operations with a gate drive this time applied to the transistors.…”

Section: Introductionmentioning

confidence: 99%

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Ageing of SiC JFET transistors under repetitive current limitation conditions

Berkani

Othman

Lefebvre

et al. 2010

Microelectronics Reliability

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“…Previous results on SiC JFET transistors (normally on) have already shown high robustness to current limitation operations and very good performances at very high temperature [5,6].…”

Section: Introductionmentioning

confidence: 93%

Section: Introductionmentioning

confidence: 99%

Ageing of SiC JFET transistors under repetitive current limitation conditions

Berkani

Othman

Lefebvre

et al. 2010

Microelectronics Reliability

Self Cite

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“…Saturation: The saturation current, i sat , (from t 2 to t 3 ) heavily depends on the v gs and the carrier mobility of the channel, which, in turn, varies with the ambient temperature [16].…”

Section: Short Circuit Analysismentioning

confidence: 99%

Modulator for five-phase voltage-source inverters

Komrska

Glasberger

Peroutka

2015

2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe)

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“…The topologies of these devices correspond mainly to inverters and synchronous rectifiers, for aircraft or photovoltaic applications [6]. Moreover, it is noteworthy that the JFET appears to be the most mature and robust SiC power switching structure at the present time [7].…”

Section: Introductionmentioning

confidence: 99%

Design and Implementation of Integrated Common Mode Capacitors for SiC-JFET Inverters

Robutel

Martin

Buttay

et al. 2014

IEEE Trans. Power Electron.

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Abstract-This paper deals with the issue of electromagnetic interference (EMI) in SiC-JFET inverter power modules, and proposes a solution to limit conducted emissions at high frequencies. SiC-JFET inverters can achieve very fast switching, thereby reducing commutation losses, at the cost of a high level of EMI. In order to limit conducted EMI emissions, it is proposed to integrate small-value common mode (CM) capacitors, directly into the power module. High frequency noise, which is usually difficult to filter, is then contained within the module, thus keeping it far from the external network. This approach is in line with the current trend towards the integration of various functions (such as protection, sensors or drivers) around power devices in modern power modules. To demonstrate this concept, the resulting CM noise was investigated, and compared with a standard configuration. Simulations were used to design the integrated capacitors, and measurements were carried out on an experimental SiC-JFET half-bridge structure. A significant reduction was achieved in the experimentally observed CM conducted emissions, with a very minor influence on the switching waveforms, losses and overall size of the system. The benefits and limitations of this design are discussed, for the case of mid-power range inverters for aircraft applications.

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Robustness of SiC JFET in Short-Circuit Modes

Cited by 37 publications

References 7 publications

Ageing of SiC JFET transistors under repetitive current limitation conditions

Ageing of SiC JFET transistors under repetitive current limitation conditions

Modulator for five-phase voltage-source inverters

Design and Implementation of Integrated Common Mode Capacitors for SiC-JFET Inverters

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