1966
DOI: 10.1103/physrevlett.16.356
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Richardson-Schottky Effect in Insulators

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Cited by 132 publications
(78 citation statements)
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“…14, with an image-charge-induced lowering of the injection barrier included in a similar way as in the work of Emtage and O'Dwyer. 20 For thin devices and high disorder strengths the current obtained from the 3D calculations was found to be somewhat higher than that obtained from the 1D drift-diffusion model. It is in this regime that the current density becomes extremely nonuniform.…”
Section: Introductionmentioning
confidence: 96%
“…14, with an image-charge-induced lowering of the injection barrier included in a similar way as in the work of Emtage and O'Dwyer. 20 For thin devices and high disorder strengths the current obtained from the 3D calculations was found to be somewhat higher than that obtained from the 1D drift-diffusion model. It is in this regime that the current density becomes extremely nonuniform.…”
Section: Introductionmentioning
confidence: 96%
“…Lowering of this barrier due to the image charge potential, as described in Ref. 46 is taken into account. The sensitivity of the results to the value of u will be discussed in Sec.…”
Section: Device Modelingmentioning
confidence: 99%
“…When the bias voltage overcomes the Schottky barrier between the tip and the ferroelectric thin film, charges with the same polarity to the depolarization charges can be injected from the EFM tip to surface. [16][17][18] These charges injected from the EFM tip ͑surface charges͒ are shown in Fig. 3͑a͒.…”
mentioning
confidence: 99%