2009
DOI: 10.1063/1.3124077
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Surface charge dynamics on ferroelectric PbZr0.48Ti0.52O3 films responding to the switching bias of electric force microscope

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Cited by 14 publications
(11 citation statements)
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“…For a given negative/positive tip bias, the number of injected electrons/holes is dependent on the Schottky barrier height DU B . This current density is usually so high that the bias-induced polarization can be screened within a sub-ms timescale, as evidenced by the work of Son et al 16 Our results in general show that the bias-induced surface state is over-screened as the change of SP relative to the null bias states, DSP, is positive for positive biases and vice versa ( Figs. 3(e)-3(h)).…”
supporting
confidence: 67%
“…For a given negative/positive tip bias, the number of injected electrons/holes is dependent on the Schottky barrier height DU B . This current density is usually so high that the bias-induced polarization can be screened within a sub-ms timescale, as evidenced by the work of Son et al 16 Our results in general show that the bias-induced surface state is over-screened as the change of SP relative to the null bias states, DSP, is positive for positive biases and vice versa ( Figs. 3(e)-3(h)).…”
supporting
confidence: 67%
“…19,20 Moreover, surface chemistry is not only important for the stabilization of ferroelectric surfaces, 21 but in fact polarization switching kinetics are intrinsically coupled to surface electrochemical phenomena. [22][23][24][25][26][27] Finally, not only the surface but also the bulk chemical composition is susceptible to the polarization direction and switching. 28 Exploring the coupling between electrochemistry and ferroelectricity is made particularly challenging by not only the spatial but also chemical resolution required, lacking in any one single technique.…”
Section: Introductionmentioning
confidence: 99%
“…14 As shown in Fig. 3(h), the surface potential kept negative to 0.05 V, which was less than that of the reported ferroelectric PbZr 0.53 Ti 0.47 O 3 (1.0 V) 15 and BiFe 0.95 Ca 0.05 O 3 (0.5 V). 2 This reduced bias suggests that electron trapping is much easier in the BFNO films.…”
mentioning
confidence: 76%
“…11 Meanwhile, the leakage current of epitaxial Pt-BFO-SRO capacitors films is interface-limited Schottky thermionic emission and strongly dependent on the orientation of the substrate. 16 The charges are injected into deep inside the films by the increase of the Schottky-type tunneling current, 15 and the amount of the surface charges could be evaluated from the Schottky…”
mentioning
confidence: 99%