Rhombohedral epitaxy of cubic SiGe on trigonal c-plane sapphire

Park, Yeonjoon; King, Glen C.; Choi, Sang H.

doi:10.1016/j.jcrysgro.2008.02.010

Cited by 26 publications

(20 citation statements)

References 23 publications

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“…and hexagonal SiC semiconductors [1]. Recent work [2] has demonstrated a third engineering model, the rhombohedral-trigonal crystal model illustrated in Fig. 1(a).…”

Section: Introductionmentioning

confidence: 99%

Temperature dependence of crystalline SiGe growth on sapphire (0001) substrates by sputtering

Kim¹,

Bae²,

Park³

et al. 2012

Journal of Crystal Growth

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“…and hexagonal SiC semiconductors [1]. Recent work [2] has demonstrated a third engineering model, the rhombohedral-trigonal crystal model illustrated in Fig. 1(a).…”

Section: Introductionmentioning

confidence: 99%

Temperature dependence of crystalline SiGe growth on sapphire (0001) substrates by sputtering

Kim¹,

Bae²,

Park³

et al. 2012

Journal of Crystal Growth

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“…We demonstrated the fabrication of high-quality SiGe layers on sapphire substrate by sputtering. The ideal of this process is that a fundamental governing relationship exists in rhombohedral epitaxy process, that is, the growth of ⟨111⟩-oriented cubic crystals on the basal -plane of trigonal sapphire crystals [33][34][35]. One of the concerns with this epitaxy relationship is that two crystal structures tend to be formed which exhibit a twin lattice structure.…”

Section: Resultsmentioning

confidence: 99%

High-Electron-Mobility SiGe on Sapphire Substrate for Fast Chipsets

Kim

Park

Bae

et al. 2015

Advances in Condensed Matter Physics

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High-quality strain-relaxed SiGe films with a low twin defect density, high electron mobility, and smooth surface are critical for device fabrication to achieve designed performance. The mobilities of SiGe can be a few times higher than those of silicon due to the content of high carrier mobilities of germanium (p-type Si: 430 cm 2 /V⋅s, p-type Ge: 2200 cm 2 /V⋅s, n-type Si: 1300 cm 2 /V⋅s, and n-type Ge: 3000 cm 2 /V⋅s at 10 16 per cm 3 doping density). Therefore, radio frequency devices which are made with rhombohedral SiGe on -plane sapphire can potentially run a few times faster than RF devices on SOS wafers. NASA Langley has successfully grown highly ordered single crystal rhombohedral epitaxy using an atomic alignment of the [111] direction of cubic SiGe on top of the [0001] direction of the sapphire basal plane. Several samples of rhombohedrally grown SiGe on -plane sapphire show high percentage of a single crystalline over 95% to 99.5%. The electron mobilities of the tested samples are between those of single crystals Si and Ge. The measured electron mobility of 95% single crystal SiGe was 1538 cm 2 /V⋅s which is between 350 cm 2 /V⋅s (Si) and 1550 cm 2 /V⋅s (Ge) at 6 × 10 17 /cm 3 doping concentration.

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“…The existence of anti-phase domains of cubic structure grown on c-plane sapphire substrate was also reported in cubic SiC, cubic GeSi, and cubic NiO growth. [10,43,44] The reason is because the atomic alignment of the SiC [111] direction on the trigonal structure c-plane sapphire allows a poly-type crystalline structure, with 60°-rotated twin defects, as a result of stacking faults, as well as twinning on the interface with the underlying trigonal substrate. Figure 3b shows the phi-scan of (102) and (103) reflections of SiC epilayer, (102) reflections of AlN buffer, and (104) reflections of sapphire substrate.…”

Section: Resultsmentioning

confidence: 99%