Temperature dependence of crystalline SiGe growth on sapphire (0001) substrates by sputtering

Kim, Hyun-Jung; Bae, Hyung-Bin; Park, Yeonjoon; Lee, Kunik; Choi, Sang H.

doi:10.1016/j.jcrysgro.2012.05.009

Cited by 11 publications

(3 citation statements)

References 16 publications

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“…During coalescence of 3D islands, one type of twin can expand at the expense of the other twin phase. This is consistent with the case of SiGe growth on sapphire, where formation of microtwin lamellas and a significant reduction of twin volume have been reported for a thick continuous SiGe layer after island coalescence 16 and explained by successive glides of the Shockley partial dislocations (surrounding each twin region) on the adjacent glide planes. 17,18 Together, these results show that introducing a thin layer of AlAs improves the wetting of the substrate, twinning, in-plane-correlation and results in better overall quality of GaAs.…”

Section: Resultssupporting

confidence: 91%

Crystalline GaAs Thin Film Growth on a c-Plane Sapphire Substrate

Saha

Kumar

Kuchuk

et al. 2019

Crystal Growth & Design

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Crystalline zinc blende GaAs has been grown on a trigonal c-plane sapphire substrate by molecular beam epitaxy. The initial stage of GaAs thin film growth has been investigated extensively in this paper. When grown on c-plane sapphire, it takes (111) crystal orientation with twinning as a major problem. Direct growth of GaAs on sapphire results in three-dimensional GaAs islands, almost 50% twin volume, and a weak in-plane correlation with the substrate. Introducing a thin AlAs nucleation layer results in complete wetting of the substrate, better in-plane correlation with the substrate, and reduced twinning to 16%. Further, we investigated the effect of growth temperature, pregrowth sapphire substrate surface treatment, and in-situ annealing on the quality of the GaAs epilayer. We have been able to reduce the twin volume below 2% and an X-ray diffraction rocking curve line width to 223 arcsec. A good quality GaAs on sapphire can result in the implementation of microwave photonic functionality on a photonic chip.

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Section: Resultssupporting

confidence: 91%

Crystalline GaAs Thin Film Growth on a c-Plane Sapphire Substrate

Saha

Kumar

Kuchuk

et al. 2019

Crystal Growth & Design

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“…We demonstrated the fabrication of high-quality SiGe layers on sapphire substrate by sputtering. The ideal of this process is that a fundamental governing relationship exists in rhombohedral epitaxy process, that is, the growth of ⟨111⟩-oriented cubic crystals on the basal -plane of trigonal sapphire crystals [33][34][35]. One of the concerns with this epitaxy relationship is that two crystal structures tend to be formed which exhibit a twin lattice structure.…”

Section: Resultsmentioning

confidence: 99%

High-Electron-Mobility SiGe on Sapphire Substrate for Fast Chipsets

Kim

Park

Bae

et al. 2015

Advances in Condensed Matter Physics

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High-quality strain-relaxed SiGe films with a low twin defect density, high electron mobility, and smooth surface are critical for device fabrication to achieve designed performance. The mobilities of SiGe can be a few times higher than those of silicon due to the content of high carrier mobilities of germanium (p-type Si: 430 cm 2 /V⋅s, p-type Ge: 2200 cm 2 /V⋅s, n-type Si: 1300 cm 2 /V⋅s, and n-type Ge: 3000 cm 2 /V⋅s at 10 16 per cm 3 doping density). Therefore, radio frequency devices which are made with rhombohedral SiGe on -plane sapphire can potentially run a few times faster than RF devices on SOS wafers. NASA Langley has successfully grown highly ordered single crystal rhombohedral epitaxy using an atomic alignment of the [111] direction of cubic SiGe on top of the [0001] direction of the sapphire basal plane. Several samples of rhombohedrally grown SiGe on -plane sapphire show high percentage of a single crystalline over 95% to 99.5%. The electron mobilities of the tested samples are between those of single crystals Si and Ge. The measured electron mobility of 95% single crystal SiGe was 1538 cm 2 /V⋅s which is between 350 cm 2 /V⋅s (Si) and 1550 cm 2 /V⋅s (Ge) at 6 × 10 17 /cm 3 doping concentration.

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“…The Φ scan is parallel with the (111) SiGe surface normal, and each scan completed one whole revolution of the wafer at a constant position designed to find all the {220} reflections. A similar Φ scan is done with the sapphire (0001), parallel with the (111) SiGe surface, to find all the reflections 8,9 . A high quality SiGe film will have three peaks in the SiGe scan, corresponding to the three {220} planes in the film.…”

Section: Methodsmentioning

confidence: 99%

High mobility Si0.15Ge0.85 growth by using the molten target sputtering (MTS) within heteroepitaxy framework

Kim

2019

Sci Rep

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High-speed SiGe film is promising use in photonics and electronics technologies continue to replace Si-based devices. High mobility Si 0.15 Ge 0.85 film on sapphire was grown at 890 °C substrate temperature by using a conventional magnetron sputtering system within the heteroepitaxy framework. 890 °C substrate temperate is impractical for commercial device manufacturing due to long thermal soak, loading time, and costly process. To leverage the practical SiGe device applications, the Molten Target Sputtering (MTS) techniques is developed. The MTS is an economic and robust process from high flux density and liquid-state of molecules benefits. At 500 °C, the lowest substrate temperature, high mobility Si 0.15 Ge 0.85 film with continues morphology and 99.7% majority-orientation were grown by using the MTS. The hall electron mobilities of the Si 0.15 Ge 0.85 grown at 500 °C are 456 cm 2 V −1 s −1 and 123.9 cm 2 V −1 s −1 at 5.59 × 10 18 cm 3 and 3.5 × 10 20 cm 3 carrier concentration at 22.38 °C, respectively. The values are 550% higher hall electron mobilities than that of Si at equivalent carrier concentration and temperatures. We envision that the MTS is beneficial for the heteroepitaxy framework film growth that requires high substrate temperature to overcome the large lattice parameter mismatch between film and substrate.

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Temperature dependence of crystalline SiGe growth on sapphire (0001) substrates by sputtering

Cited by 11 publications

References 16 publications

Crystalline GaAs Thin Film Growth on a c-Plane Sapphire Substrate

Crystalline GaAs Thin Film Growth on a c-Plane Sapphire Substrate

High-Electron-Mobility SiGe on Sapphire Substrate for Fast Chipsets

High mobility Si0.15Ge0.85 growth by using the molten target sputtering (MTS) within heteroepitaxy framework

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