RF sputtered PLZT thin film on Pt/Ti electrode

Perovskite crystallization of sol-gel processed (Pb,La0.06,Gd0.02)(Zr0.65,Ti0.35)O3 thin films: Dielectric, ferroelectric and optical properties

“…In the low-frequency region, tan ␦ did not show any dispersion and showed a flat behavior up to 10 5 Hz. 6 The observed E c value is close to the value reported (65 kV/cm) for PLZT (7.5/65/35) thin films prepared by rf magnetron sputtering, 21 but is much larger than the value expected for this composition, as donor doping of PZT (65/35) brings down the coercive field. At the frequency of the order of 10 5 Hz, stray inductance of the contact and the leads may induce L-C resonance [f r ‫ס‬ 1/√(LC)].…”

Effect of multi-layered bottom electrodes on the orientation of strontium-doped lead zirconate titanate thin films

“…PSZT thin films deposited on electrode configurations (ii) and (iii) were not usable, as the underlying layers delaminated due to stress imbalance between the various layers. This is attributed to the differences in coefficients of thermal expansion and ratio of thicknesses of the different layers [10]. Titanium dioxide layers were experimented with, and PSZT thin films deposited on electrode configuration (iv) were very smooth, as the reaction between platinum and titanium was prevented, and preferential perovskite PSZT orientation was obtained (Fig.…”

Structural and Dielectric Properties of Pb[(Zr,Sn)Ti]NbO3Thin Films Deposited by Radio Frequency Magnetron Sputtering

“…These values were superior to those obtained for sol-gel derived PNZST films [9], and exhibited a low coercive field. In our results, it is thought that a low coercive field is due to the decrease of the space charge layer inside each ferroelectric domain by doping Sn and Nb in PZT [12]. In general, the slightly lower Pr and higher E c may be associated with the smaller grain size in thinner films.…”

“…2(e), when the annealing temperature increased to 700°C, the intensity of the (111)-oriented PNZST perovskite peak increased, while the other peaks had negligible changes. This reveals that the annealing temperature has a greater and more significant effect on the crystallinity of thin films rather than the substrate temperature [12]. Perovskite-type PNZ-ST thin films can be obtained by RF magnetron sputtering provided that the films are annealed at high temperatures.…”

“…Over the last decade, ferroelectric thin films have been widely investigated for nonvolatile memory applications [1][2][3][4][5][6][7][8][9][10][11][12]. Among ferroelectric materials, lead-zirconate-titanate (PZT) has been considered to be the most promising candidate for memory applications [1][2][3].…”