RF power amplifier integration in CMOS technology

Chen, Yangyu; Hamai, M.; Heo, Deukhyoun; Sutono, A.; Yoo, Seung Joon; Laskar, J.

doi:10.1109/mwsym.2000.861114

Cited by 31 publications

(11 citation statements)

References 4 publications

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“…This maximum PER given by (26) is times larger than (24). 2 In the design process, we start from a given transistor and a given power level that has to be delivered to the load. These two conditions determine the desired value of the PER .…”

Section: B Magnetically Coupled Transformer Impedance Transformationmentioning

confidence: 99%

“…Until now, the highest output powers achieved by fully integrated power amplifiers in standard silicon processes are 85 mW [1] delivered to a differential 50-load with a power-added efficiency (PAE) of 30% and 100 mW with a drain efficiency of 16% [2], both implemented in CMOS technology. Other works using CMOS [3], [4] or Si bipolar [5], [6] processes rely on the use of external passive components such as bond wire inductors, off-chip transmission lines, off-chip capacitors, and/or external baluns to achieve watt level output power.…”

Section: Introductionmentioning

confidence: 99%

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Distributed active transformer-a new power-combining and impedance-transformation technique

Aoki

Kee

Rutledge

et al. 2002

IEEE Trans. Microwave Theory Techn.

395

218

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Abstract-In this paper, we compare the performance of the newly introduced distributed active transformer (DAT) structure to that of conventional on-chip impedance-transformations methods. Their fundamental power-efficiency limitations in the design of high-power fully integrated amplifiers in standard silicon process technologies are analyzed. The DAT is demonstrated to be an efficient impedance-transformation and power-combining method, which combines several low-voltage push-pull amplifiers in series by magnetic coupling. To demonstrate the validity of the new concept, a 2.4-GHz 1.9-W 2-V fully integrated power-amplifier achieving a power-added efficiency of 41% with 50-input and output matching has been fabricated using 0.35-m CMOS transistors.

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Section: B Magnetically Coupled Transformer Impedance Transformationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Distributed active transformer-a new power-combining and impedance-transformation technique

Aoki

Kee

Rutledge

et al. 2002

IEEE Trans. Microwave Theory Techn.

395

218

View full text Add to dashboard Cite

show abstract

“…In particular, LDMOS transistors with a breakdown voltage of 20 V [5] and GaAs monolithic microwave integrated circuits (MMICs) with semi-insulating substrate [6]- [8] have been used to integrate power amplifiers. To date, the highest power levels achieved with fully integrated amplifiers in standard silicon are on the order of 100 mW [9], [10].…”

Section: Introductionmentioning

confidence: 99%

Fully integrated CMOS power amplifier design using the distributed active-transformer architecture

Aoki

Kee

Rutledge

et al. 2002

IEEE J. Solid-State Circuits

330

128

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Abstract-A novel on-chip impedance matching and powercombining method, the distributed active transformer is presented. It combines several low-voltage push-pull amplifiers efficiently with their outputs in series to produce a larger output power while maintaining a 50-match. It also uses virtual ac grounds and magnetic couplings extensively to eliminate the need for any offchip component, such as tuned bonding wires or external inductors. Furthermore, it desensitizes the operation of the amplifier to the inductance of bonding wires making the design more reproducible. To demonstrate the feasibility of this concept, a 2.4-GHz 2-W 2-V truly fully integrated power amplifier with 50-input and output matching has been fabricated using 0.35-m CMOS transistors. It achieves a power added efficiency (PAE) of 41% at this power level. It can also produce 450 mW using a 1-V supply. Harmonic suppression is 64 dBc or better. This new topology makes possible a truly fully integrated watt-level gigahertz range low-voltage CMOS power amplifier for the first time.

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“…It overcomes the low breakdown voltage of short-channel MOS transistors and alleviates the substrate loss problems by providing the power gain through multi- 4 To date, the highest power levels achieved with fully integrated amplifiers in standard silicon are on the order of 100 mW [9].…”

Section: Other Distributed Circuitsmentioning

confidence: 99%

Distributed integrated circuits: an alternative approach to high-frequency design

Hajimiri

2002

IEEE Commun. Mag.

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Distributed integrated circuits are presented as a methodology to design high-frequency communication building blocks. Distributed circuits operate based on multiple parallel signal paths working in synchronization that can be used to enhance the frequency of operation, combine power, and enhance the robustness of the design. These multiple signal paths usually result in strong couplings inside the circuit that necessitate a treatment spanning architecture, circuits, devices, and electromagnetic levels of abstraction.

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RF power amplifier integration in CMOS technology

Cited by 31 publications

References 4 publications

Distributed active transformer-a new power-combining and impedance-transformation technique

Distributed active transformer-a new power-combining and impedance-transformation technique

Fully integrated CMOS power amplifier design using the distributed active-transformer architecture

Distributed integrated circuits: an alternative approach to high-frequency design

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