RF Performance of Proton-Irradiated AlGaN/GaN HEMTs

Chen, Jin; Zhang, En Xia; Zhang, Cher Xuan; McCurdy, Michael W.; Fleetwood, D.M.; Schrimpf, Ronald D.; Kaun, Stephen W.; Kyle, Erin C. H.; Speck, James S.

doi:10.1109/tns.2014.2362872

Cited by 25 publications

(18 citation statements)

References 23 publications

(34 reference statements)

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“…30,35,36 The threshold voltage shifts were found to be the highest for N-rich MBE growth, considerably lower for Ga-rich MBE growth, and the lowest for NH 3 -MBE and MOCVD growth (both characterized by N-rich conditions and the abundance of hydrogen). In a comparison of HEMTs grown only by MBE under Ga-rich or ammonia -rich conditions, while there was no difference in pinch-off voltage change with proton fluence, 45 there were significant differences in transconductance as shown in Figure 10. 45 The NH 3 -rich devices showed lower degrees of degradation in transconductance with increasing proton fluence and the 1/ f noise of the devices increased with increasing fluence.…”

Section: Summary Of Radiation Effects In Ganmentioning

confidence: 97%

“…In a comparison of HEMTs grown only by MBE under Ga-rich or ammonia -rich conditions, while there was no difference in pinch-off voltage change with proton fluence, 45 there were significant differences in transconductance as shown in Figure 10. 45 The NH 3 -rich devices showed lower degrees of degradation in transconductance with increasing proton fluence and the 1/ f noise of the devices increased with increasing fluence. Density functional theory calculations showed that N vacancies and Ga-N divacancies lead to enhanced noise in these devices.…”

Section: Summary Of Radiation Effects In Ganmentioning

confidence: 97%

“…Calculations of the defects formation energies and defects concentrations in AlGaN by protons showed that the type of defects formed by irradiation depends Figure 10. Normalized peak transconductance as a function of 1.8 MeVproton fluence for AlGaN/GaN HEMTs grown under either Ga-rich or ammonia-rich conditions (after J. Chen et al 45 ).…”

Section: Summary Of Radiation Effects In Ganmentioning

confidence: 99%

See 2 more Smart Citations

Review—Ionizing Radiation Damage Effects on GaN Devices

Pearton

Ren

Patrick

et al. 2015

ECS J. Solid State Sci. Technol.

269

130

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Gallium Nitride based high electron mobility transistors (HEMTs) are attractive for use in high power and high frequency applications, with higher breakdown voltages and two dimensional electron gas (2DEG) density compared to their GaAs counterparts. Specific applications for nitride HEMTs include air, land and satellite based communications and phased array radar. Highly efficient GaNbased blue light emitting diodes (LEDs) employ AlGaN and InGaN alloys with different compositions integrated into heterojunctions and quantum wells. The realization of these blue LEDs has led to white light sources, in which a blue LED is used to excite a phosphor material; light is then emitted in the yellow spectral range, which, combined with the blue light, appears as white. Alternatively, multiple LEDs of red, green and blue can be used together. Both of these technologies are used in high-efficiency white electroluminescent light sources. These light sources are efficient and long-lived and are therefore replacing incandescent and fluorescent lamps for general lighting purposes. Since lighting represents 20-30% of electrical energy consumption, and because GaN white light LEDs require ten times less energy than ordinary light bulbs, the use of efficient blue LEDs leads to significant energy savings. GaN-based devices are more radiation hard than their Si and GaAs counterparts due to the high bond strength in III-nitride materials. The response of GaN to radiation damage is a function of radiation type, dose and energy, as well as the carrier density, impurity content and dislocation density in the GaN. The latter can act as sinks for created defects and parameters such as the carrier removal rate due to trapping of carriers into radiation-induced defects depends on the crystal growth method used to grow the GaN layers. The growth method has a clear effect on radiation response beyond the carrier type and radiation source. We review data on the radiation resistance of AlGaN/GaN and InAlN/GaN HEMTs and GaN-based LEDs to different types of ionizing radiation, and discuss ion stopping mechanisms. The primary energy levels introduced by different forms of radiation, carrier removal rates and role of existing defects in GaN are discussed. The carrier removal rates are a function of initial carrier concentration and dose but not of dose rate or hydrogen concentration in the nitride material grown by Metal Organic Chemical Vapor Deposition. Proton and electron irradiation damage in HEMTs creates positive threshold voltage shifts due to a decrease in the two dimensional electron gas concentration resulting from electron trapping at defect sites, as well as a decrease in carrier mobility and degradation of drain current and transconductance. State-of-art simulators now provide accurate predictions for the observed changes in radiation-damaged HEMT performance. Neutron irradiation creates more extended damage regions and at high doses leads to Fermi level pinning while 60 Co γ-ray irradiation leads to much smaller changes in HEMT drain ...

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Section: Summary Of Radiation Effects In Ganmentioning

confidence: 97%

Section: Summary Of Radiation Effects In Ganmentioning

confidence: 97%

Section: Summary Of Radiation Effects In Ganmentioning

confidence: 99%

See 1 more Smart Citation

Review—Ionizing Radiation Damage Effects on GaN Devices

Pearton

Ren

Patrick

et al. 2015

ECS J. Solid State Sci. Technol.

269

130

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“…Displacement-related point defects are considered the primary damage mechanism that influences device performance in proton-irradiated InP HEMTs. [12,13,20] Energetic protons transfer part of their kinetic energy to the lattice atoms through non-ionizing energy loss (NIEL). This energy displaces atoms from their lattice sites and creates charged defect centers.…”

Section: Vacancy Profilementioning

confidence: 99%

“…Typical features are the positive shift of threshold volt-age, degradation of transconductance, current, operating frequency, and gain. [11][12][13][14][15][16][17][18] Besides, the related literature demonstrates that a large value of conduction band offset correlates with greater tolerance of radiation damage. [19,20] However, there are few studies on the proton irradiation of InP HEMTs.…”

Section: Introductionmentioning

confidence: 99%

A comparative study on radiation reliability of composite channel InP high electron mobility transistors*

Zhang¹,

Ding²,

Jin³

et al. 2021

Chinese Phys. B

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This paper proposes a reasonable radiation-resistant composite channel structure for InP HEMTs. The simulation results show that the composite channel structure has excellent electrical properties due to increased modulation doping efficiency and carrier confinement. Moreover, the direct current (DC) and radio frequency (RF) characteristics and their reliability between the single channel structure and the composite channel structure after 75-keV proton irradiation are compared in detail. The results show that the composite channel structure has excellent radiation tolerance. Mechanism analysis demonstrates that the composite channel structure weakens the carrier removal effect. This phenomenon can account for the increase of native carrier and the decrease of defect capture rate.

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Border traps and bias-temperature instabilities in MOS devices

Fleetwood

2018

Microelectronics Reliability

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RF Performance of Proton-Irradiated AlGaN/GaN HEMTs

Cited by 25 publications

References 23 publications

Review—Ionizing Radiation Damage Effects on GaN Devices

Review—Ionizing Radiation Damage Effects on GaN Devices

A comparative study on radiation reliability of composite channel InP high electron mobility transistors*

Border traps and bias-temperature instabilities in MOS devices

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