RF Model of Lateral Bipolar Junction Transistor on Silicon-on-Insulator Substrate

Abstract

A methodology for modelling a novel highfrequency lateral bipolar junction transistor (LBJT) is described. A modified SPICE-Gummel-Poon (SGP) model is used to simulate the device, with the SGP parameters determined based on the transistor's physical geometry. DC, AC, and S-parameter simulations using this model are verified against measured data. The results show good matching and demonstrates that the novel geometry of the LBJT facilitates modelling by reducing the influence of second order effects.