RF/microwave transistors: evolution, current status, and future trend

Liou, Juin J.; Schwierz, Frank

doi:10.1109/hkedm.2002.1029145

Cited by 3 publications

(4 citation statements)

References 26 publications

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“…In the single pulse version, a powerful pulse (1.5 optical oscillations, amplitude ≈ E 1.7 VÅ −1 ) was polarized in the electron-transfer direction (the xpolarization), as depicted by the blue waveform, see figure 9. This schematic of figure 9 resembles a metal-oxide-semiconductor field-effect transistor (MOSFET) [53][54][55][56] except for a fundamental difference: instead of a semiconductor, it employs a wide-band insulator.…”

Section: Wannier-stark Localization and Attosecond Control Of Reversi...mentioning

confidence: 99%

Strong-field and attosecond physics in solids

Ghimire

Ndabashimiye

DiChiara

et al. 2014

J. Phys. B: At. Mol. Opt. Phys.

130

108

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We review the status of strong-field and attosecond processes in bulk transparent solids near the Keldysh tunneling limit. For high enough fields and low-frequency excitations, the optical and electronic properties of dielectrics can be transiently and reversibly modified within the applied pulse. In Ghimire et al (2011 Phys. Rev. Lett. 107 167407) non-parabolic band effects were seen in photon-assisted tunneling experiments in ZnO crystals in a strong mid-infrared field. Using the same ZnO crystals, Ghimire et al (2011 Nat. Phys. 7 138-41) reported the first observation of non-pertubative high harmonics, extending well above the bandgap into the vacuum ultraviolet. Recent experiments by Schubert et al (2014 Nat. Photonics 8 119-23) showed a carrier envelope phase dependence in the harmonic spectrum in strong-field 30 THz driven GaSe crystals which is the most direct evidence yet of the role of sub-cycle electron dynamics in solid-state harmonic generation. The harmonic generation mechanism is different from the gas phase owing to the high density and periodicity of the crystal. For example, this results in a linear dependence of the high-energy cutoff with the applied field in contrast to the quadratic dependence in the gas phase. Sub-100 attosecond pulses could become possible if the harmonic spectrum can be extended into the extreme ultraviolet (XUV). Here we report harmonics generated in bulk MgO crystals, extending to ∼26 eV when driven by ∼35 fs, 800 nm pulses focused to a ∼1 VÅ −1 peak field. The fundamental strong-field and attosecond response also leads to Wannier-Stark localization and reversible semimetallization as seen in the sub-optical cycle behavior of XUV absorption and photocurrent experiments on fused silica by Schiffrin et al (2013 Nature 493 70-4) and Schultze et al (2013 Nature 493 75-8). These studies are advancing our understanding of fundamental strong-field and attosecond physics in solids with potential applications for compact coherent short-wavelength sources and ultra-high speed optoelectronics.

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Section: Wannier-stark Localization and Attosecond Control Of Reversi...mentioning

confidence: 99%

Strong-field and attosecond physics in solids

Ghimire

Ndabashimiye

DiChiara

et al. 2014

J. Phys. B: At. Mol. Opt. Phys.

130

108

View full text Add to dashboard Cite

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“…Finally, we note a close analogy of silicene with the field-effect transistor (FET) [18][19][20][21] . In FET, the gate field, applied normally to the conducting channel, changes the carrier populations in it and, thereby, controls its conductance.…”

Section: Concluding Discussionmentioning

confidence: 99%

“…Recently, silicene has shown 17 promise for applications in electronics such as field-effect transistors (FETs) [18][19][20][21] where, being a semiconductor, it has a natural advantage over graphene that is a semimetal. Below we will consider silicene but all qualitative results are also valid for germanene.…”

Section: Introductionmentioning

confidence: 99%

Ultrafast field control of symmetry, reciprocity, and reversibility in buckled graphene-like materials

2015

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We theoretically show that buckled two-dimensional graphene-like materials (silicene and germanene) subjected to a femtosecond strong optical pulse can be controlled by the optical field component normal to their plane. In such strong fields, these materials are predicted to exhibit non-reciprocal reflection, optical rectification and generation of electric currents both parallel and normal to the in-plane field direction. Reversibility of the conduction band population is also fieldand carrier-envelope phase controllable. There is a net charge transfer along the material plane that is also dependent on the normal field component. Thus a graphene-like buckled material behaves analogously to a field-effect transistor controlled and driven by the electric field of light with subcycle (femtosecond) speed.

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“…The metal-oxide-semiconductor field-effect transistors (MOSFETs) are the basic devices in modern telecommunication technology [1]. The cutoff-frequencies of the MOSFETs can be higher than 100 GHz in theory [2][3][4]. While the maximum speed of the processor has been limited to ~3 GHz for a long time because of two main factors: the charging time of the interconnected wires and heat dissipation [5].…”

Section: Introductionmentioning

confidence: 99%

Quantum-trajectory analysis for charge transfer in solid materials induced by strong laser fields

Jiang

Yuan

et al. 2017

J. Phys.: Condens. Matter

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We investigate the dependence of charge transfer on the intensity of driving laser field when SiO crystal is irradiated by an 800 nm laser. It is surprising that the direction of charge transfer undergoes a sudden reversal when the driving laser intensity exceeds critical values with different carrier-envelope phases. By applying quantum-trajectory analysis, we find that the Bloch oscillation plays an important role in charge transfer in solids. Also, we study the interaction of a strong laser with gallium nitride (GaN), which is widely used in optoelectronics. A pump-probe scheme is applied to control the quantum trajectories of the electrons in the conduction band. The signal of charge transfer is controlled successfully by means of a theoretically proposed approach.

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RF/microwave transistors: evolution, current status, and future trend

Cited by 3 publications

References 26 publications

Strong-field and attosecond physics in solids

Strong-field and attosecond physics in solids

Ultrafast field control of symmetry, reciprocity, and reversibility in buckled graphene-like materials

Quantum-trajectory analysis for charge transfer in solid materials induced by strong laser fields

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