Ultrafast field control of symmetry, reciprocity, and reversibility in buckled graphene-like materials

Abstract

We theoretically show that buckled two-dimensional graphene-like materials (silicene and germanene) subjected to a femtosecond strong optical pulse can be controlled by the optical field component normal to their plane. In such strong fields, these materials are predicted to exhibit non-reciprocal reflection, optical rectification and generation of electric currents both parallel and normal to the in-plane field direction. Reversibility of the conduction band population is also fieldand carrier-envelope phase controllable. There is a net charge transfer along the material plane that is also dependent on the normal field component. Thus a graphene-like buckled material behaves analogously to a field-effect transistor controlled and driven by the electric field of light with subcycle (femtosecond) speed.

Spatial spin flipping and spin switching phenomena on a Y-shaped graphene nanoribbon ferromagnetic junction with Rashba spin orbit coupling and strain

“…As a scheme to solute the Moore's law of electronics, spintronics, aims to manipulate charge and spin degrees of freedom of an electron, has become one of the most Frontier research fields in recent years [1][2][3][4]. With the advances of high mobilities of carriers [16], fast transport speeds approximate to that of light [17], strong field effects even at the roomtemperature [18,19]. Moreover, graphene is an excellent platform of spin transport for its mature preparation techniques such as cutting [20], stacking [21] and doping [22,23].…”

Ultrafast electron dynamics in monolayer MoS2 interacting with optical pulse influenced by exchange field and waveform

“…interacting with ultrafast optical pulses [14][15][16][17][18][19][20][21][22][23][24][25][26]. The availability of the monolayer honeycomb lattice structures with peculiar electronic and physical properties, such as graphene and transition metal dichalcogenides (TMD) has provided a smooth way to result in novel interesting responses in devices including 2D materials perturbed by electromagnetic or superconducting potentials.…”

Nonlinear plasmonic switching in graphene-based stub nanoresonator loaded with core-shell nanowire

“…For practical realization of a new transistor, the strict account for a charge carrier mobility [35] and memory effect [68] in graphene are necessary. The solution of this problem requires the development of a new paradigm of material science directed on achievement of high-temperature superconductivity of graphene [15] and graphene-like materials [69]. Moreover it addresses to 2D stack-structures based on a combination of monolayers with different physical properties and QDs [26,27,70,71].…”