RF-MEMS switch module in a 0.25 μm BiCMOS technology

Kaynak, Mehmet; Wietstruck, Matthias; Zhang, W.; Drews, Jürgen; Scholz, R.; Knoll, D.; Korndörfer, F.; Wipf, Christian; Schulz, Katrin; Elkhouly, Mohamed; Kaletta, K.; Suchodoletz, Maria von; Zoschke, Kai; Wilke, Martin; Ehrmann, O.; Muhlhaus, Volker; Liu, G.; Purtova, Tatyana; Ulusoy, Ahmet Çağrı; Schumacher, Hermann; Tillack, Bernd

doi:10.1109/sirf.2012.6160150

Cited by 11 publications

(11 citation statements)

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“…[12] Mechanical, electrical and RF-performance is mainly dominated by the effective residual stress of the suspended M3 layer. The well-defined stress compensation of the thin TiN/Ti/AlCu/TiN/Ti layer leads to a membrane up-bended in the contact region providing a proximity-type four point contact in down-state [3]. Variations in residual stress, stress gradients and the different thermal expansion coefficients of the complex BEOL stack lead to a significant influence of temperature on the membrane shape and therefore affects the contact formation.…”

Section: Bicmos Embedded Rf-mems Switchmentioning

confidence: 99%

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Electro-thermo-mechanical analysis of a BiCMOS embedded RF-MEMS switch for temperatures from −55°C to + 125°C

Wietstruck

Kaynak

Zhang

et al. 2013

2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

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The influence of temperature on electrical, mechanical and RF-performance of a BiCMOS embedded RF-MEMS switch has been demonstrated. Instead of exclusively estimating the temperature-dependent RF-MEMS switch key performance parameters, understanding the temperature influence on the mechanics together with the related electrical and RF-performance is preferred. A detailed thermo-mechanical analysis of the suspended membrane shows that the membrane shape and contact formation is strongly affected by temperature variations. It explains the significant influence of temperature on the pull-in voltage and on-state capacitance showing that a thermo-mechanical analysis is absolutely mandatory for an efficient process and design optimization to increase the temperature robustness.

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Section: Bicmos Embedded Rf-mems Switchmentioning

confidence: 99%

“…Compared to PIN-diodes and FET switches, electromechanical switches are considered as key components due to their low insertion loss, high isolation and low power consumption [1]- [2]. In recent years, the BiCMOS embedded RF-MEMS switch was demonstrated showing an outstanding performance and very good reliability [3]- [4].…”

Section: Introductionmentioning

confidence: 99%

Electro-thermo-mechanical analysis of a BiCMOS embedded RF-MEMS switch for temperatures from −55°C to + 125°C

Wietstruck

Kaynak

Zhang

et al. 2013

2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

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“…This metal contact between TiN and TiN occurs at the edges of the signal line guarantying an extremely stable and repeatable ohmic contact. Although the resistance associated to this contact is quite high (-5 k Ohm), this turns out to have not significant effect since it is in parallel with the down state MEMS capacitance formed by the curved membrane and the RF line [6].…”

Section: Description Of the Switchmentioning

confidence: 99%

“…The other major reliability issue, namely the mechanical contact repeatability between the membrane and the signal line, has been tackled by adding a floating TiN electrode on top of the SiN dielectric layer [6]. This metal contact between TiN and TiN occurs at the edges of the signal line guarantying an extremely stable and repeatable ohmic contact.…”

Section: Description Of the Switchmentioning

confidence: 99%

“…Due to the shape of the deformation (Fig. 2 top), the membrane contacts the top electrode of the MIM capacitor only at the corners of the contact zone (modeled by a high resistance R contact ) creating an air gap (C MEMS ) [6]. Therefore, one of the most critical issues of capacitive switches, the repeatability of the down capacitance, is counteracted by using this technique.…”

Section: Lumped-elements Based Equivalent Circuitmentioning

confidence: 99%

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Estimation of RF performance from LF measurements: Towards the design for reliability in RF-MEMS

Matabosch

Kaynak

Coccetti

et al. 2012

Microelectronics Reliability

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MEMS‐based LC tank with extended tuning range for multiband applications

Cazzorla

Farinelli²,

Urbani³

et al. 2016

Radio Science

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This paper presents the modeling, simulations, and measurements of a compact multiband microelectromechanical (MEMS)‐based LC tank resonator suitable for low phase noise voltage‐controlled oscillators (VCOs). The resonator is based on a high‐Q spiral inductor and high capacitance ratio varicap fully integrated in FBK‐irst (Fondazione Bruno Kessler) MEMS manufacturing process. The design of the varicap is based on double‐actuation mechanism with a mechanical central bond that inhibits the pull‐in allowing for a theoretically infinite tuning ratio. The measurements have shown a total not continuous capacitance ratio (Cr) of 5.2 with a continuous variation of the capacitance values in the range 225 fF–600 fF which corresponds to a continuous capacitance ratio (Cr*) of 2.6. The performance repeatability, the power‐handling capability, and the stability over time were tested on 10 samples showing a negligible variation of the capacitance values. The spiral inductor consists of a suspended gold membrane thick 5 µm in a circular shape which was modeled in order to optimize the quality factor (Q) in the frequency range 2–4 GHz. The measurement results show a Q of about 55 in the 2–4 GHz frequency band. The LC tank measurements show an overall tuning range better than of 45% in the 3.2–4.9 GHz frequency band, consisting of two continuous tuning ranges of 7.5% and 25%. The LC tank allowed the design of MEMS‐based voltage‐controlled oscillators (VCOs) with an overall tuning better than 60% in the frequency range 2.15 GHz–3.85 GHz and two separate regions of continuous tuning range. The VCO prototype will be fabricated on Surface Mount Technology on RO4350 laminate. The main figures of merit are presented in comparison with the state of the art.

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RF-MEMS switch module in a 0.25 μm BiCMOS technology

Cited by 11 publications

References 1 publication

Electro-thermo-mechanical analysis of a BiCMOS embedded RF-MEMS switch for temperatures from −55°C to + 125°C

Electro-thermo-mechanical analysis of a BiCMOS embedded RF-MEMS switch for temperatures from −55°C to + 125°C

Estimation of RF performance from LF measurements: Towards the design for reliability in RF-MEMS

MEMS‐based LC tank with extended tuning range for multiband applications

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RF-MEMS switch module in a 0.25 μm BiCMOS technology

Cited by 11 publications

References 1 publication

Electro-thermo-mechanical analysis of a BiCMOS embedded RF-MEMS switch for temperatures from &#x2212;55&#x00B0;C to &#x002B; 125&#x00B0;C

Electro-thermo-mechanical analysis of a BiCMOS embedded RF-MEMS switch for temperatures from &#x2212;55&#x00B0;C to &#x002B; 125&#x00B0;C

Estimation of RF performance from LF measurements: Towards the design for reliability in RF-MEMS

MEMS‐based LC tank with extended tuning range for multiband applications

Contact Info

Product

Resources

About

Electro-thermo-mechanical analysis of a BiCMOS embedded RF-MEMS switch for temperatures from −55°C to + 125°C

Electro-thermo-mechanical analysis of a BiCMOS embedded RF-MEMS switch for temperatures from −55°C to + 125°C