RF MEMS capacitive switches fabricated with HDICP CVD SiN/sub x/

Chang, C. H.; Qian, Jiangyuan; Cetiner, Bedri A.; Xu, Qingshan; Bachman, Mark; Kim, H.K.; Ra, Y.; Flaviis, F. De; Li, G.P.

doi:10.1109/mwsym.2002.1011600

Cited by 20 publications

(11 citation statements)

References 4 publications

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“…Several capacitive switches have been fabricated using HDICP-CVD silicon nitride. Measurements have shown that switches possess excellent RF performance and dynamic features similar to those of switches fabricated on semiconductor substrates [19].…”

Section: Silicon Nitride Depositionmentioning

confidence: 93%

“…After the silicon nitride film is deposited, it is then patterned by photoresist and dry PECVD temperatures range from 250 C-400 C. This temperature range is not suitable for PCB substrates. A low-temperature (90 C-170 C) HDICP CVD is the most suitable method for deposition of silicon nitride films on PCB substrates [19]. This method has been tried before with a large degree of success.…”

Section: Silicon Nitride Depositionmentioning

confidence: 99%

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Development of RF-MEMS switch on PCB substrates with polyimide planarization

et al. 2005

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This paper describes an improved manufacturing technology for the fabrication of radio frequency (RF) microelectromechanical systems switches on a laminated printed circuit board (PCB). The process simplifies the fabrication process without sacrificing the RF performance of switches on the PCB. The proposed process patterns a 17.5-m-thick copper layer on the PCB; as a result, the surface becomes highly nonplanarized. Polyimide is then used to planarize the PCB's patterned copper layer. The use of polyimide for planarization has not only made the fabrication process simpler, but it has also reduced the formation of voids in the photoresist sacrificial layer where metallic membrane is deposited and patterned. The switches fabricated with this technology demonstrate a low insertion loss (less than 0.06 dB at 10 GHz) and good isolation (less than 20 dB at 10 GHz).Index Terms-Microelectromechanical systems (MEMS), polyimide, printed circuit board (PCB), radio frequency (RF), switch.

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Section: Silicon Nitride Depositionmentioning

confidence: 93%

Section: Silicon Nitride Depositionmentioning

confidence: 99%

Development of RF-MEMS switch on PCB substrates with polyimide planarization

et al. 2005

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“…However PECVD film deposition temperature typically ranges from 250 to 400 C, which are not suitable for PCB substrates. We have developed a novel technique, a low-temperature (90-170 C) high density inductively coupled plasma chemical vapor deposition (HDICP CVD) to deposit SiN films [23]. The HDICP CVD method uses a commercially available ICP reactor (Bethel Materials Research, Irvine, CA) to inductively couple RF power, creating high-density plasma in the processing reactor through a strategically located and designed antenna array.…”

Section: B High-density Inductively Coupled Plasma Chemical Vapor Dementioning

confidence: 99%

Design and process considerations for fabricating RF MEMS switches on printed circuit boards

Chang

Qian

Cetiner

et al. 2005

J. Microelectromech. Syst.

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Design considerations and process development for fabricating radio frequency microelectromechanical systems (RF MEMS) switches on microwave laminate printed circuit boards (PCBs) are presented in details in this work. Two key processes, high-density inductively coupled plasma chemical vapor deposition (HDICP CVD) for low-temperature silicon nitride deposition, and compressive molding planarization (COMP) have been developed for fabricating RF MEMS switches on PCB. The effects of process conditions of HDICP CVD on low-temperature nitride film are fully characterized for its use in RF MEMS switches on PCB. Not only can COMP planarize the surface of the photoresist for lithographic patterning over topologically complex surfaces, but also simultaneously create a membrane relief pattern on the surface of a MEMS structure. Several membrane-type capacitive switches have been fabricated showing excellent RF performance and dynamic responses similar to those on semiconductor substrates. This technology promises the potential of enabling further monolithic integration of switches with other RF components, such as antennas, microwave monolithic integrated circuits (MMICs), phase shifters, tunable filters, and transmission lines on the same PCBs reducing the losses due to impedance mismatching from components/system assembly and simplifies the design of the whole RF system.[1416]Index Terms-Compressive molding planarization (COMP), high-density inductively coupled plasma chemical vapor deposition (HDICP CVD), printed circuit board (PCB), radio frequency microelectromechanical systems (RF MEMS) switches.

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“…While many MEMS devices have been built using semiconductor manufacturing techniques, limited work has been done to demonstrate fabrication of MEMS with post-semiconductor manufacturing processes (PSM) such as PCB and packaging [7][8][9][10][11][12][13][14]. There are several advantages that could be realized if MEMS devices were built using post semiconductor manufacturing instead of semiconductor approaches.…”

Section: Introductionmentioning

confidence: 99%

Laminate MEMS for Heterogeneous Integrated Systems

Bachman

2012

MRS Proc.

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Post semiconductor manufacturing processes (PSM), including packaging and printed circuit board (PCB) manufacturing are now capable of producing trace widths of a few micrometers, high aspect ratio vias, three-dimensional constructions, and highly integrated systems in a single small package. Such PSM technology can in principle be used to manufacture micro electromechanical systems (MEMS) for sensing and actuation applications. Although MEMS are traditionally produced using silicon processes, the broad array of manufacturing approaches available in the packaging industry, including lamination, lithography, etching, electroforming, machining, bonding, etc., and the large number of available materials such as polymers, ceramics, metals, etc., provides greater design freedom for producing functional microdevices. The results of such processes applied to fabricating small systems are heterogeneously integrated MEMS devices. Since lamination of stacked layers is a critical component of this process, we refer to these devices as "laminate MEMS."In many cases laminate MEMS devices are more suited to their applications than their silicon counterparts, especially for applications such as biomedical, optical, and human computer interface. Furthermore, such microdevices can be built with a high degree of integration, prepackaged, and at low cost. Indeed, the PCB and packaging industries stand to benefit greatly by expanding their offerings beyond serving the semiconductor industry and developing their own devices and products. This paper illustrates that good quality MEMS devices can be manufactured using packaging style fabrication, particularly using stacks of laminates, and discusses some of the unique benefits of such devices. This laminate MEMS technology promises not only improved methods for manufacturing microdevices but also for heterogeneously integrating them with silicon microelectronics and other components into a single package.

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RF MEMS capacitive switches fabricated with HDICP CVD SiN/sub x/

Cited by 20 publications

References 4 publications

Development of RF-MEMS switch on PCB substrates with polyimide planarization

Development of RF-MEMS switch on PCB substrates with polyimide planarization

Design and process considerations for fabricating RF MEMS switches on printed circuit boards

Laminate MEMS for Heterogeneous Integrated Systems

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