RF–DC power conversion of Schottky diode fabricated on AlGaAs/GaAs heterostructure for on-chip rectenna device application in nanosystems

Mustafa, Farahiyah; Parimon, Norfarariyanti; Hashim, Abdul Manaf; Rahman, Shaharin Fadzli Abd; Rahman, Abdul; Osman, Mohd Nizam

doi:10.1007/s00542-010-1099-4

Cited by 6 publications

(6 citation statements)

References 11 publications

(9 reference statements)

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“…The three parameters of diode, V br , junction capacitance, C j and series resistance, R s determine the power conversion efficiency. We have also shown that the R s should be small enough to operate at higher frequency with high conversion efficiency [ 4 ].…”

Section: Resultsmentioning

confidence: 99%

“…Ideally, such a III–V semiconductor chip should be placed on a Si platform. Recently, we reported the proposal of direct integration of an antenna and a Schottky diode for a RF power detector as well as a rectenna ( rec tified an tenna ) device application to supply direct current (DC) power to generate other on-chip nanodevices [ 3 , 4 ].…”

Section: Introductionmentioning

confidence: 99%

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Dual-Functional On-Chip AlGaAs/GaAs Schottky Diode for RF Power Detection and Low-Power Rectenna Applications

Hashim

Mustafa

Rahman

et al. 2011

Sensors

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A Schottky diode has been designed and fabricated on an n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT) structure. Current-voltage (I–V) measurements show good device rectification, with a Schottky barrier height of 0.4349 eV for Ni/Au metallization. The differences between the Schottky barrier height and the theoretical value (1.443 eV) are due to the fabrication process and smaller contact area. The RF signals up to 1 GHz are rectified well by the fabricated Schottky diode and a stable DC output voltage is obtained. The increment ratio of output voltage vs input power is 0.2 V/dBm for all tested frequencies, which is considered good enough for RF power detection. Power conversion efficiency up to 50% is obtained at frequency of 1 GHz and input power of 20 dBm with series connection between diode and load, which also shows the device’s good potential as a rectenna device with further improvement. The fabricated n-AlGaAs/GaAs Schottky diode thus provides a conduit for breakthrough designs for RF power detectors, as well as ultra-low power on-chip rectenna device technology to be integrated in nanosystems.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Dual-Functional On-Chip AlGaAs/GaAs Schottky Diode for RF Power Detection and Low-Power Rectenna Applications

Hashim

Mustafa

Rahman

et al. 2011

Sensors

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“…The HEMT structures was etched to the SI layer during the process of mesa formation by using a mixture of sulphuric acid, H 2 SO 4 , hydrogen peroxide (H 2 O 2 ) and deionized (DI) water at 25 °C for 18 s. Formation of CPW and the dipole antenna on a SI layer seems to reduce the RF losses as the signal is travelling through the CPW. The details of the materials and the fabrication processes have been described in [ 10 , 15 , 31 ]. Figure 1b shows the top-view photo of the rectenna device.…”

Section: Fabrication Of the Integrated Devicementioning

confidence: 99%

“…The most promising breakthrough to further increase the performance of ULSIs is by introducing new channel materials with higher carrier mobilities than Si, such as gallium arsenide (GaAs) [ 7 , 8 ]. Therefore, co-integration of GaAs on Si should lead to the realization of the so-called advanced heterogeneous integration on a Si platform [ 9 ], where this material is not only used for the fabrication of high speed transistor, but also for the fabrication of other functional devices such as on-chip low power sources [ 10 ], sensors [ 11 , 12 ], optical devices [ 13 ], detectors [ 14 – 16 ] and solar batteries [ 17 ]. Nowadays, there is extensive research on the growth of GaAs on Si [ 18 – 20 ], which has seemed to accelerate the realization of such technology.…”

Section: Introductionmentioning

confidence: 99%

RF-to-DC Characteristics of Direct Irradiated On-Chip Gallium Arsenide Schottky Diode and Antenna for Application in Proximity Communication System

Mustafa

Hashim

2014

Sensors

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We report the RF-to-DC characteristics of the integrated AlGaAs/GaAs Schottky diode and antenna under the direct injection and irradiation condition. The conversion efficiency up to 80% under direct injection of 1 GHz signal to the diode was achieved. It was found that the reduction of series resistance and parallel connection of diode and load tend to lead to the improvement of RF-to-DC conversion efficiency. Under direct irradiation from antenna-to-antenna method, the output voltage of 35 mV was still obtainable for the distance of 8 cm between both antennas in spite of large mismatch in the resonant frequency between the diode and the connected antenna. Higher output voltage in volt range is expected to be achievable for the well-matching condition. The proposed on-chip AlGaAs/GaAs HEMT Schottky diode and antenna seems to be a promising candidate to be used for application in proximity communication system as a wireless low power source as well as a highly sensitive RF detector.

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“…In device based method, rectifiers are implemented by using Schottky diodes [11], zero-threshold transistors [12] and native transistors [13]. These implementations require dedicated manufacturing steps.…”

Section: Introductionmentioning

confidence: 99%

A complete analysis and measurement results of the threshold voltage cancellation scheme for RF to DC converter

Chouhan

Halonen

2015

Analog Integr Circ Sig Process

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In this work, the threshold voltage cancellation scheme for the RF-to-DC converter used in RF energy harvesting is presented. The proposed scheme reduces the threshold voltage of PMOS transistor used in CMOS rectifier with the use of additional CMOS components. The performance of the proposed scheme is evaluated against the conventional CMOS rectifier in terms of the power conversion efficiency (PCE). Measurements were done at 433 MHz RF frequency for resistive load values ranging from 1 to 120 KX. The measured peak PCE of the conventional CMOS and proposed rectifiers are 16 and 35 %, respectively, for the input RF power level of À8 dBm and resistive load of value 10 KX. The implementation of the proposed scheme is also tested in the multi-stage rectifier circuit (MSC) topology. All PMOS-based DTMOS-biased MSC circuit was selected to implement the proposed scheme and for performance comparison. The measured results show the PCE of a five stage DTMOS-biased MSC circuit is 15 % @ À6 dBm with 66 KX resistive load whereas after implementing proposed scheme on the alternate PMOS transistors of DTMOS-biased MSC circuit resulted into 19 % PCE for the same input and output conditions.

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RF–DC power conversion of Schottky diode fabricated on AlGaAs/GaAs heterostructure for on-chip rectenna device application in nanosystems

Cited by 6 publications

References 11 publications

Dual-Functional On-Chip AlGaAs/GaAs Schottky Diode for RF Power Detection and Low-Power Rectenna Applications

Dual-Functional On-Chip AlGaAs/GaAs Schottky Diode for RF Power Detection and Low-Power Rectenna Applications

RF-to-DC Characteristics of Direct Irradiated On-Chip Gallium Arsenide Schottky Diode and Antenna for Application in Proximity Communication System

A complete analysis and measurement results of the threshold voltage cancellation scheme for RF to DC converter

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