Abstract:We report the RF-to-DC characteristics of the integrated AlGaAs/GaAs Schottky diode and antenna under the direct injection and irradiation condition. The conversion efficiency up to 80% under direct injection of 1 GHz signal to the diode was achieved. It was found that the reduction of series resistance and parallel connection of diode and load tend to lead to the improvement of RF-to-DC conversion efficiency. Under direct irradiation from antenna-to-antenna method, the output voltage of 35 mV was still obtain… Show more
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