Revolutionary and evolutionary resist design concepts for 193 nm lithography

Nalamasu, O.; Wallow, Tom; Reichmanis, Elsa; Novembre, Anthony E.; Houlihan, Francis M.; Dabbagh, G.; Mixon, David A.; Hutton, R. S.; Timko, Allen G.; Wood, O. R.; Cirelli, Raymond A.

doi:10.1016/s0167-9317(96)00172-4

Cited by 15 publications

(19 citation statements)

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“…Due to the high absorption coefficient of styrene groups at 193 nm it is again necessary to develop new photoresist systems. At IBM, resists based on acrylic polymers are being developed [115], whereas at AT&T polymers based on cycloolefin-maleic anhydride copolymers are being tested [116]. Both of these systems are CA systems using a photochemical acid generator, plasma etching stabilizers, and some dissolution inhibitors.…”

mentioning

confidence: 99%

Laser Application of Polymers

Lippert

2004

Polymers and Light

147

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Laser ablation of polymers has been studied with designed materials to evaluate the mechanism of ablation and the role of photochemically active groups on the ablation process, and to test possible applications of laser ablation and designed polymers. The incorporation of photochemically active groups lowers the threshold of ablation and allows high-quality structuring without contamination and modification of the remaining surface. The decomposition of the active chromophore takes place during the excitation pulse of the laser and gaseous products are ejected with supersonic velocity. Time-of-flight mass spectrometry reveals that a metastable species is among the products, suggesting that excited electronic states are involved in the ablation process. Experiments with a reference material, i.e., polyimide, for which a photothermal ablation mechanism has been suggested, exhibited pronounced differences. These results strongly suggest that, in case of designed polymers which contain photochemically active groups, a photochemical part in the ablation mechanism cannot be neglected. Various potential applications for laser ablation and the special photopolymers were evaluated and it became clear that the potential of laser ablation and specially designed material is in the field of microstructuring. Laser ablation can be used to fabricate three-dimensional elements, e.g., microoptical elements.Keywords Laser ablation · Ablation mechanism · Photopolymers · Polyimide · Spectroscopy This was not always true, of course. For many years, the laser was viewed as "an answer in search of a question". That is, it was seen as an elegant device, but one with no real useful application outside of fundamental scientific research. In the last two to three decades however, numerous laser applications have moved from the laboratory to the industrial workplace or the commercial market. Lasers are unique energy sources characterized by their spectral purity, spatial and temporal coherence, and high average peak intensity. Each of these characteristics has led to applications that take advantage of these qualities: -Spatial coherence: e.g., remote sensing, range finding and many holographic techniques. -Spectral purity: e.g., atmospheric monitoring based on high-resolution spectroscopies. -and of course the many other applications in communication and storage, e.g., CDs.All of these high-tech applications have come to define everyday life in the late twentieth century. One property of lasers, however, that of high intensity, did not immediately lead to "delicate" applications but rather to those requiring "brute force". That is, the laser was used in applications for removing material or heating. The first realistic applications involved cutting, drilling, and welding, and the laser was little more advanced than a saw, a drill, or a torch. In a humorous vein A.L. Schawlow proposed and demonstrated the first "laser eraser" in 1965 [4], using the different absorptivities of paper and ink to remove the ink without damaging the und...

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confidence: 99%

Laser Application of Polymers

Lippert

2004

Polymers and Light

147

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“…The leading candidate for the manufacture of 0.18 ±0.13 mm design rule devices is photolithography using 193 nm radiation. 2,15,16 The ®rst experiments demonstrating the feasibility of UV light as an imaging source for lithography occurred at Bell Laboratories in 1975. 17,18 Bowden and Chandross demonstrated the concept using poly(butene-1-sulphone) which, upon exposure to 185 nm light, exhibited a sensitivity of 5 mJ cm À2 .…”

Section: Nm Lithographic Materialsmentioning

confidence: 99%

“…This has both necessitated a paradigm shift in the approach to lithographic materials and process design, and spawned the design of new resist schemes. 2 Processes under consideration for use with the 193 nm technology include the traditional solution developed methodologies in addition to dry-developed techniques. The latter span the range of silicon containing bilevel approaches that were of signi®cant interest approximately one decade ago, to silylation processes, to the more recently described all-dry, plasma deposit/plasma develop systems.…”

Section: Nm Lithographic Materialsmentioning

confidence: 99%

“…Photolithography employing 193 nm light is the consensus candidate for the next generation of lithography tools. 2 At this wavelength however, the opacity of traditional materials precludes their use, and major research efforts to develop alternative materials are currently underway. Materials properties must be carefully tailored to maximize lithographic imaging performance with minimal sacri®ce of other performance attributes, eg adhesion, solubility and radio-frequency (RF) plasma etching stability.…”

Section: Introductionmentioning

confidence: 99%

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Radiation chemistry of polymeric materials: novel chemistry and applications for microlithography

Reichmanis¹,

Nalamasu²,

Houlihan³

et al. 1999

Polym. Int.

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“…[4] scCO 2 also has unique properties beneficial for the development of dense, high-aspect-ratio, sub-micrometer features: high diffusivity, high density, low viscosity, and the absence of surface tension, which prevents pattern collapse. [5] Additionally, CVD has the potential to eliminate the solvent for applying resists [6][7][8] by combining polymer synthesis and thin-film coating into one single step. Patterning of CVD thin films using scCO 2 development was first explored in the CVD of poly(tetrafluoroethylene) (PTFE) thin films.…”

Section: Introductionmentioning

confidence: 99%

Positive- and Negative-Tone CVD Polyacrylic Electron-Beam Resists Developable by Supercritical CO2

Mao

Felix

Nguyen

et al. 2006

Chem. Vap. Deposition

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Resist layers sensitive to electron-beam (e-beam) exposure and developable in supercritical carbon dioxide (scCO 2 ) can be synthesized by initiated CVD (iCVD), resulting in an all-dry lithographic process. The low energy and low temperatures of the iCVD method permit the retention of the irradiation-sensitive pendent organic functional groups, and the incorporation of the fluorinated acrylates needed for increased solubility in scCO 2 . Negative-tone contrast is realized through crosslinking of the epoxy group of glycidyl methacrylate (GMA) when copolymerized with 2,2,3,3,4,4,5,5,6,6,7,7-dodecafluoroheptyl acrylate (DFHA). The Fineman-Ross equation describes the systematic tuning and random nature of the composition of these iCVD films. Positive-tone contrast with non-swelling 300 nm features was achieved through the anhydride-stabilized chainscission reactions in post-annealed iCVD copolymers of methacrylic acid (MAA) and perfluoroalkyl ethyl methacrylate (PFEMA). The CF 3 end groups in PFEMA contribute to higher scCO 2 solubility than DFHA, allowing development of PFEMA copolymers with lower content of fluorine-containing component at milder condition than DFHA copolymers.

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Revolutionary and evolutionary resist design concepts for 193 nm lithography

Cited by 15 publications

References 5 publications

Laser Application of Polymers

Laser Application of Polymers

Radiation chemistry of polymeric materials: novel chemistry and applications for microlithography

Positive- and Negative-Tone CVD Polyacrylic Electron-Beam Resists Developable by Supercritical CO2

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