Revolutional Progress of Silicon Technologies Exhibiting Very High Speed Performance Over a 50-GHz Clock Rate

Ohmi, Tadahiro; Teramoto, Akinobu; Kuroda, Rihito; Miyamoto, Naoto

doi:10.1109/ted.2007.896391

Cited by 58 publications

(48 citation statements)

References 14 publications

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“…Therefore, high-k materials should be introduced instead of conventional SiO 2 gate insulator. Many institutions have reported so far the Si surface flattening process [17,18,19,20], and MOSFETs with atomically flat interface at Si/gate insulator show higher performances than those with conventional devices [21,22,23,24]. The 1/f noise in MOSFETs with Si/high-k gate stacks has also been reported [25,26].…”

Section: Introductionmentioning

confidence: 96%

Importance of Si surface flatness to realize high-performance Si devices utilizing ultrathin films with new material system

Ohmi

2014

IEICE Electron. Express

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The importance of Si surface flatness on metal-oxide-semiconductor field-effect transistor (MOSFET) characteristics with ultrathin hafnium oxynitride (HfON) high-k gate insulator formed by electron cyclotron resonance (ECR) plasma sputtering was described. The surface roughness of Si substrate was reduced by Ar/4.9%H 2 annealing utilizing conventional rapid thermal annealing (RTA) system. Si surface root-mean-square (RMS) roughness was well controlled by changing the annealing temperature from 700 to 1000°C. Si surface RMS roughness after 1000°C/1 hr annealing was 0.078 nm for Si(100) and 0.082 nm for Si(110), respectively. Clear dependence of electrical characteristics of MOS diodes such as equivalent oxide thickness (EOT) and leakage current on the surface RMS roughness of Si(100) and Si(110) was observed, and the electrical characteristics were remarkably improved by decreasing of surface RMS roughness. The MOSFET characteristics with HfON gate insulator fabricated on Si(100) substrates after flattening process were also improved.

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Section: Introductionmentioning

confidence: 96%

Importance of Si surface flatness to realize high-performance Si devices utilizing ultrathin films with new material system

Ohmi

2014

IEICE Electron. Express

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“…Also, some papers report on the impact of the flatness of the interface on 1/f noise characteristics [3,4]. Then, a recent work has proposed that the MOS inversion layer mobility and current drivability of MOSFETs can be improved by the introduction of atomically flat gate insulator/silicon interface up to very high speed performance [5]. Also, electrical characteristics variation and 1/f noise of MOSFETs that increase with a progress of the device miniaturization have become one of the most crucial issues in the analog and even digital applications for the recent extremely scaled down LSIs.…”

Section: Introductionmentioning

confidence: 99%

Atomically flat gate insulator/silicon (100) interface formation introducing high mobility, ultra-low noise, and small characteristics variation CMOSFET

Kuroda

Teramoto

Suwa

et al. 2008

ESSDERC 2008 - 38th European Solid-State Device Research Conference

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Atomically flat silicon surface constructed with atomic terraces and steps is realized by pure argon ambience annealing at 1200 o C on (100) crystal orientation large diameter wafers with precisely controlled tilt angle. Only the radical reaction based insulator formation technology such as oxidation utilizing oxygen radicals carried out at low temperature (400 o C) can preserve the atomically flatness at the gate insulator film/silicon interface. CMOSFET having the atomically flat interface exhibit extremely lower 1/f noise and higher mobility characteristics with smaller electrical variation than those of CMOSFETs fabricated by the conventional technologies.

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“…As the device scaling, the atomic scale roughness of the SiO 2 /Si and gate electrode/SiO 2 interfaces will significantly affect the device performance [1,2,3,4]. It has been reported that the atomically flat surface of Si(100) is able to be obtained by annealing in Ar or H 2 ambient at 1200ºC [5,6,7].…”

Section: Introductionmentioning

confidence: 99%

“…It has been reported that the atomically flat surface of Si(100) is able to be obtained by annealing in Ar or H 2 ambient at 1200ºC [5,6,7]. Recently many institutions have reported that MOSFETs with atomically flat interface between Si(100) and gate insulator show higher performances than those with conventional devices [8,9,10]. It has been known that the carrier mobility improved by flattening the interface between Si and gate insulator, because the carrier scattering caused by the interface roughness is suppressed [10,11].…”

Section: Introductionmentioning

confidence: 99%

Impact of Si surface roughness on MOSFET characteristics with ultrathin HfON gate insulator formed by ECR plasma sputtering

Han

Ohmi

2013

IEICE Electron. Express

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In this paper, the impact of Si surface roughness on metal oxide semiconductor field effect transistor (MOSFET) characteristics with ultrathin hafnium oxynitride (HfON) gate insulator formed by electron cyclotron resonance (ECR) sputtering was investigated. The surface roughness of Si substrate was reduced by Ar/4.9%H 2 annealing utilizing conventional rapid thermal annealing (RTA) system. The obtained root-mean-square (RMS) roughness was 0.08 nm (as-cleaned: 0.21 nm). The HfON was formed by 2 nm-thick HfN deposition followed by the Ar/O 2 plasma oxidation. The electrical properties of HfON gate insulator were improved by the reduction of Si surface roughness. It was found that the current drivability of fabricated nMOSFETs was remarkably increased by reduction of Si surface roughness.

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Revolutional Progress of Silicon Technologies Exhibiting Very High Speed Performance Over a 50-GHz Clock Rate

Cited by 58 publications

References 14 publications

Importance of Si surface flatness to realize high-performance Si devices utilizing ultrathin films with new material system

Importance of Si surface flatness to realize high-performance Si devices utilizing ultrathin films with new material system

Atomically flat gate insulator/silicon (100) interface formation introducing high mobility, ultra-low noise, and small characteristics variation CMOSFET

Impact of Si surface roughness on MOSFET characteristics with ultrathin HfON gate insulator formed by ECR plasma sputtering

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