Review on Non-Volatile Memory with High-k Dielectrics:  Flash for Generation Beyond 32 nm

Zhao, Chun; Zhao, Ce Zhou; Taylor, Stephen; Chalker, Paul R.

doi:10.3390/ma7075117

Cited by 140 publications

(89 citation statements)

References 54 publications

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“…A crucial challenge in the electronics industry is obtaining low-power fast NVM devices with small dimensions. A silicon-oxide-nitride-oxide-silicon (SONOS)-like structure has become widely used for charging devices because it does not have a planar scaling problem for floating gate isolation and exhibits considerable potential for achieving high program/erase (P/E) speeds, low programming voltages, and low power performance [1,2,3,4,5,6,7]. …”

Section: Introductionmentioning

confidence: 99%

Work Function Adjustment by Using Dipole Engineering for TaN-Al2O3-Si3N4-HfSiOx-Silicon Nonvolatile Memory

Lin

Yang

2015

Materials

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This paper presents a novel TaN-Al2O3-HfSiOx-SiO2-silicon (TAHOS) nonvolatile memory (NVM) design with dipole engineering at the HfSiOx/SiO2 interface. The threshold voltage shift achieved by using dipole engineering could enable work function adjustment for NVM devices. The dipole layer at the tunnel oxide–charge storage layer interface increases the programming speed and provides satisfactory retention. This NVM device has a high program/erase (P/E) speed; a 2-V memory window can be achieved by applying 16 V for 10 μs. Regarding high-temperature retention characteristics, 62% of the initial memory window was maintained after 103 P/E-cycle stress in a 10-year simulation. This paper discusses the performance improvement enabled by using dipole layer engineering in the TAHOS NVM.

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Section: Introductionmentioning

confidence: 99%

Work Function Adjustment by Using Dipole Engineering for TaN-Al2O3-Si3N4-HfSiOx-Silicon Nonvolatile Memory

Lin

Yang

2015

Materials

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“…Vacuum level Flash memories for future generations are also based on the use of high permittivity dielectrics [51], [52]. With using nanocrystals as floating gate, higher data retention and faster program/erase speeds are obtained [53].…”

Section: Evmentioning

confidence: 99%

Progress in Materials for Microelectronics and Further Challenges

Novkovski¹,

Skeparovski²,

Paskaleva³

et al. 2017

Contributions

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Development of materials and technologies for microelectronics is required by the needs of the constantly increasing level of integration of microelectronics circuits. Increase of the integration level compels downscaling of all the dimensions of devices, which in its turn requires very thin layers with exceptional quality due to rather high electric fields at working conditions. First, technological improvements are adopted aimed at fabrication of materials with uniform quality, geometrical flatness and extremely low density of intentionally introduced defects. Second, new fabrication methods are developed providing materials with much better quality. Third, new materials showing better properties than the standard (conventional) ones are obtained and developed further.Decreasing the dimensions of the layers changes the nature of the physical phenomena involved in the functioning of devices. Quantum mechanical mechanisms are more and more important in the description of the properties of the materials and devices on the nanoscale. The question arises where is the limit of the possibilities of the materials and technologies for nanoscale electronics.

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“…Secondly, this energy is higher than the binding energy of L 1-3 levels of aluminum and O 1-3 levels of hafnium. When the film thickness is 100 nm, the transmittance of thin film is 9% in HfO 2 (ρ= 9.68 g/cm3) and 5% in Al 2 O 3 (ρ= 3.97 g/cm 3 ) at E exc = 130 eV. This calculation was performed using the methodology described in Ref.…”

Section: Soft X-ray Excitationmentioning

confidence: 99%

“…Dielectrics with high permittivity (the so-called high-k dielectrics) such as hafnium oxide HfO 2 (κ= 12-40), zirconium oxide ZrO 2 (κ= 12-40), aluminum oxide Al 2 O 3 (κ= 10) and some others are replacing traditional dielectrics in silicon devices: silicon oxide SiO 2 (k=3.9) and silicon nitride Si 3 N 4 (κ= 3.9) [1][2][3]. Recently, among all high-k dielectrics hafniabased materials are considered as one of the most promising candidates for gate dielectrics in complementary metal-oxide-semiconductor (CMOS) technology, DRAM (dynamic random access memory) capacitors, and blocking insulators in Si-oxide-nitride-oxide-silicon (SONOS) -type flash memory cells [4,5].…”

Section: Introductionmentioning

confidence: 99%

Intrinsic and defect related luminescence in double oxide films of Al–Hf–O system under soft X-ray and VUV excitation

Пустоваров

Smirnova

Lebedev

et al. 2016

Journal of Luminescence

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Cite this article as: V.A. Pustovarov, Т.P. Smirnova, M.S. Lebedev, V.A. Gritsenko and M. Kirm, Intrinsic and defect related luminescence in double oxide films of Al-Hf-O system under soft X-ray and VUV excitation, Journal of Luminescence, http://dx.doi.org/10. 1016/j.jlumin.2015.10.053 This is a PDF file of an unedited manuscript that has been accepted for publication. As a service to our customers we are providing this early version of the manuscript. The manuscript will undergo copyediting, typesetting, and review of the resulting galley proof before it is published in its final citable form. Please note that during the production process errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain. Hafnia films and films mixed with alumina were grown in a flow-type chemical vapor deposition reactor with argon as a carrier gas. In addition, pure alumina films were prepared by the atomic layer deposition method. A strong emission band with the peak position at 4.4 eV and with the decay time in the μs-range was revealed for pure hafnia films. The emission peak at 7.74 eV with short nanosecond decay kinetics was observed in the luminescence spectra for pure alumina films. These emission bands were ascribed to the radiative decay of self-trapped excitons (an intrinsic luminescence) in pure HfO 2 and Al 2 O 3 films, respectively.Along with intrinsic host emission, defect related luminescence bands with a larger Stokes shift were observed. In the emission spectra of the solid solution films (x= 4; 17; 20 at.%) the intrinsic emission bands are quenched and only the luminescence of defects (an anion vacancies) was observed. Based on transformation of the luminescence spectra and nsluminescence decay kinetics, as well as changes in the time-resolved luminescence and 2 luminescence excitation spectra, the relaxation processes in the films of solid solution are discussed.

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Review on Non-Volatile Memory with High-k Dielectrics: Flash for Generation Beyond 32 nm

Cited by 140 publications

References 54 publications

Work Function Adjustment by Using Dipole Engineering for TaN-Al2O3-Si3N4-HfSiOx-Silicon Nonvolatile Memory

Work Function Adjustment by Using Dipole Engineering for TaN-Al2O3-Si3N4-HfSiOx-Silicon Nonvolatile Memory

Progress in Materials for Microelectronics and Further Challenges

Intrinsic and defect related luminescence in double oxide films of Al–Hf–O system under soft X-ray and VUV excitation

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