Review of wide bandgap materials and their impact in new power devices

Garrido, David; Baraia, I.

doi:10.1109/ecmsm.2017.7945876

Cited by 41 publications

(24 citation statements)

References 25 publications

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“…aN-on-Si devices are widely envisioned as promising candidates for ultra-fast, compact, and high-efficiency future power electronics applications, thanks to the superior GaN properties [1]- [3]. In addition, lateral GaN technology allows the monolithic integration of several devices on the same chip, enabling the beginning of a new era of power integrated circuits (ICs).…”

Section: Introductionmentioning

confidence: 99%

Fast-Switching Tri-Anode Schottky Barrier Diodes for Monolithically Integrated GaN-on-Si Power Circuits

Nela

Kampitsis

et al. 2020

IEEE Electron Device Lett.

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Tri-Anode GaN Schottky Barrier Diodes (SBDs) have recently shown excellent DC performance with low turn-on voltage and large breakdown thanks to their 3D contact structure around the two-dimensional electron gas (2DEG) channel. However, the 3D nature of the Tri-Anode structure is also often believed to hinder the device switching performance. In this work, we demonstrate that, on the contrary, the Tri-Anode architecture significantly enhances the device switching performance with respect to conventional planar SBDs, as shown by a substantial decrease in the recovery charge and an improvement in frequency response. The Tri-Anode SBDs excellent static and dynamic performance is then applied to a real circuit to demonstrate a monolithically integrated high-frequency Full Bridge Rectifier. These results show the potential of Tri-Anode SBDs for high-efficiency and fast-switching power integrated circuits.

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Section: Introductionmentioning

confidence: 99%

Fast-Switching Tri-Anode Schottky Barrier Diodes for Monolithically Integrated GaN-on-Si Power Circuits

Nela

Kampitsis

et al. 2020

IEEE Electron Device Lett.

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“…17 The expected volume and cost reductions for the ETDS, HVPE, and ETM are 88%, 87%, 89%, and 25%, 18%, 30%, respectively. This technical road map highlights T A B L E 1 Physical property comparison of Si, GaN and SiC [1][2][3]…”

Section: Introductionmentioning

confidence: 98%

“…Table 1 highlights the comparison of the physical properties of the GaN, SiC, and Silicon. [1][2][3] It is evident that the thermal conductivity of GaN is comparatively inferior to that of the silicon and SiC. Because of many superior properties, the GaN devices present a promising solution especially in EV applications.…”

Section: Introductionmentioning

confidence: 99%

Advancements in energy efficientGaNpower devices and power modules for electric vehicle applications: a review

Yadlapalli

Anuradha²,

Kandipati³

et al. 2021

Int J Energy Res

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The third generation wide bandgap (WBG) semiconductor materials exhibit a prominent role in various applications such as adapters, uninterrupted power supplies, smart grids, and electric vehicles (EVs). They have the phenomenal properties such as high critical breakdown field, WBG, and high-saturated drift velocity as compared to the silicon (Si). This article throws a light on the classification and recent advancements of the GaN-based power devices along with their structural features. Moreover, it explores the critical issues that degrade the device performance and also various methods to improve their performance. The recently developed commercial GaN devices are enumerated with their figure of merits (FOMs) comparison with the Si and SiC devices. The outrageous features of GaN devices are well utilized for realizing the high power density and high efficiency power converters in case of EV applications. The updated survey of various GaN devices-based ac-dc, dc-dc, and dc-ac converters is presented along with their salient features. This article also emphasizes the approaches for resolving the power module issues such as parasitics, layout, and thermal design other than the power converters. This review is ultimately helpful for the design engineers to abridge the technical gaps arising due to the power electronics barriers.

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“…Fortunately, the third-generation semiconductor materials, represented by silicon carbide (SiC) and gallium nitride (GaN), have gradually shown superior characteristics compared to Si material. Due to the wide band-gap, high breakdown field strength, high thermal conductivity, and fast electron saturation drift velocity, SiC is one of the most promising alternative materials and it is very suited for high-temperature power electronic devices [15]. Compared with conventional Si power electronic devices, commercially available SiC devices have not only better thermal stability and higher temperature tolerance but also lower switching/conduction loss.…”

Section: Introductionmentioning

confidence: 99%

Silicon Carbide Converters and MEMS Devices for High-temperature Power Electronics: A Critical Review

Guo

Xun

et al. 2019

Micromachines

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The significant advance of power electronics in today’s market is calling for high-performance power conversion systems and MEMS devices that can operate reliably in harsh environments, such as high working temperature. Silicon-carbide (SiC) power electronic devices are featured by the high junction temperature, low power losses, and excellent thermal stability, and thus are attractive to converters and MEMS devices applied in a high-temperature environment. This paper conducts an overview of high-temperature power electronics, with a focus on high-temperature converters and MEMS devices. The critical components, namely SiC power devices and modules, gate drives, and passive components, are introduced and comparatively analyzed regarding composition material, physical structure, and packaging technology. Then, the research and development directions of SiC-based high-temperature converters in the fields of motor drives, rectifier units, DC–DC converters are discussed, as well as MEMS devices. Finally, the existing technical challenges facing high-temperature power electronics are identified, including gate drives, current measurement, parameters matching between each component, and packaging technology.

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Review of wide bandgap materials and their impact in new power devices

Cited by 41 publications

References 25 publications

Fast-Switching Tri-Anode Schottky Barrier Diodes for Monolithically Integrated GaN-on-Si Power Circuits

Fast-Switching Tri-Anode Schottky Barrier Diodes for Monolithically Integrated GaN-on-Si Power Circuits

Advancements in energy efficientGaNpower devices and power modules for electric vehicle applications: a review

Silicon Carbide Converters and MEMS Devices for High-temperature Power Electronics: A Critical Review

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