Silicon Carbide (SiC) MOSFETs enable enhanced performance of power converters in several applications. Parallel connection of SiC MOSFETs become mandatory for medium power applications due to the current rate of existing modules. A balanced current sharing between paralleled MOSFETs is desired to maximize the power capability of each device, maximizing the power capability of the whole system. This work studies the static current unbalance of two paralleled 1200V-400A SiC MOSFET modules with individual gate driver. Experimental measurements are done focused on parasitic inductance caused by electromechanical layout.
Electromagnetic coupling is the mechanism by which one circuit induces noise or interference in another adjacent circuit.
This coupling mechanism generates Electromagnetic Interferences that degrade or even interrupt the operation of adjacent circuits. However, it is often rare in the academic and professional fields of power electronics to have sufficient knowledge to identify and address this problem. Therefore, intuition plays an important role in anticipating and dealing with this problem.
This article describes the basic principles of this coupling mechanism and proposes simple solutions to this electromagnetic interference problem. These solutions must be applied right from the design phase of any electronic equipment.
The problem described and its solutions are experimentally validated in a simple test circuit.
This article is mainly oriented to the academic and professional field of power electronics and aims to describe in a simple and experimental way the problems associated with inductive coupling.
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