Review of recent progress of III-nitride nanowire lasers

Arafin, Shamsul; Liu, Xianhe; Mi, Zetian

doi:10.1117/1.jnp.7.074599

Cited by 100 publications

(71 citation statements)

References 139 publications

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“…Due to space and focus constraints, this review does not aim to provide an exhaustive account of the enormous amount of work on nanoscale lasers, for which we refer the reader to excellent prior reviews [4,61,68,70,71,94,132]. With the overall goal of identifying a roadmap toward laser-emitting structures with subwavelength dimensions, we consider only nanowires where at least one dimension is smaller than the effective wavelength of the active material.…”

Section: Introductionmentioning

confidence: 99%

Nanowire Lasers

et al. 2015

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Abstract:We review principles and trends in the use of semiconductor nanowires as gain media for stimulated emission and lasing. Semiconductor nanowires have recently been widely studied for use in integrated optoelectronic devices, such as light-emitting diodes (LEDs), solar cells, and transistors. Intensive research has also been conducted in the use of nanowires for subwavelength laser systems that take advantage of their quasione-dimensional (1D) nature, flexibility in material choice and combination, and intrinsic optoelectronic properties. First, we provide an overview on using quasi-1D nanowire systems to realize subwavelength lasers with efficient, directional, and low-threshold emission. We then describe the state of the art for nanowire lasers in terms of materials, geometry, and wavelength tunability. Next, we present the basics of lasing in semiconductor nanowires, define the key parameters for stimulated emission, and introduce the properties of nanowires. We then review advanced nanowire laser designs from the literature. Finally, we present interesting perspectives for low-threshold nanoscale light sources and optical interconnects. We intend to illustrate the potential of nanolasers in many applications, such as nanophotonic devices that integrate electronics and photonics for next-generation optoelectronic devices. For instance, these building blocks for nanoscale photonics can be used for data storage and biomedical applications when coupled to on-chip characterization tools. These nanoscale monochromatic laser light sources promise breakthroughs in nanophotonics, as they can operate at room temperature, can potentially be electrically driven, and can yield a better understanding of intrinsic nanomaterial properties and surface-state effects in lowdimensional semiconductor systems.

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Section: Introductionmentioning

confidence: 99%

Nanowire Lasers

et al. 2015

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“…4,5 Several groups including our group have reported InGaN NC LEDs. [6][7][8][9][10][11][12][13][14][15] Our group has fabricated regularly arrayed GaN-based NCs by selective area growth (SAG) using a Ti mask 16,17 and reduced their diameter to ∼26 nm. 18 By applying the SAG technique, the monolithic integration of LED arrays with different emission colors has been achieved by a single crystal growth process.…”

confidence: 99%

Influence of GaN column diameter on structural properties for InGaN nanocolumns grown on top of GaN nanocolumns

et al. 2016

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The influence of GaN column diameter DGaN on structural properties was systematically investigated for InGaN nanocolumns (NCs) grown on top of GaN NCs. We demonstrated a large critical layer thickness of above 400 nm for In0.3Ga0.7N/GaN NCs. The structural properties were changed at the boundary of DGaN=D0 (∼120 nm). Homogeneous InGaN NCs grew axially on the GaN NCs with DGaN≤D0, while InGaN-InGaN core-shell structures were spontaneously formed on the GaN NCs with DGaN>D0. These results can be explained by a growth system that minimizes the total strain energy of the NCs.

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“…However, their size has reached a bottleneck because of the diffraction limit of light when the dielectric medium approach the value of wavelength (λ/2n). [2][3][4] One of the most promising approaches for realizing a sub-wavelength nanosized laser with a low threshold relies on the principle of the surface plasmon amplification of stimulated emission of radiation (SPASER). [5][6][7] In this study, Ⅲ-Nitride-based plasmonic nanolaser with hybrid metal-oxide-semiconductor (MOS) structures is designed based on the principle of surface plasmon amplification by the stimulated emission of radiation (SPASER).…”

Section: Extended Abstractmentioning

confidence: 99%

Plasmonic Laser Using InGaN/GaN Nanorods with Different Shapes

Tao¹,

Zhi²,

Liu³

et al. 2017

International Conference of Theoretical and Applied Nanoscience and Nanotechnology

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Extended AbstractStimulated emission light in photonic devices on nano-scales is a challenging step to meet the requirements for optoelectronic integrations. [1] In the past decade, tremendous achievements in the fabrication of semiconductor lasers based on photonic crystals, microdisks, ring cavities and the Fabry-Pérot (F-P) cavity have been achieved. However, their size has reached a bottleneck because of the diffraction limit of light when the dielectric medium approach the value of wavelength (λ/2n).[2-4] One of the most promising approaches for realizing a sub-wavelength nanosized laser with a low threshold relies on the principle of the surface plasmon amplification of stimulated emission of radiation (SPASER). [5][6][7] In this study, Ⅲ-Nitride-based plasmonic nanolaser with hybrid metal-oxide-semiconductor (MOS) structures is designed based on the principle of surface plasmon amplification by the stimulated emission of radiation (SPASER).[7-9] Through a finite-difference time-domain (FDTD) simulations and eigenmode (MODE) simulations, triangular, hexagonal, cylinder and elliptical nanorods structures are simulated and analysed. The relationship between the geometry of the NRs and the plasmonic/photonic lasing modes was discussed. Finally, plasmonic nanolaser is fabricated by nanoimprint lithography and microfabrication. The photoluminescence (PL) spectra of the designed structure are recorded as a function of the optical pumping power density in a micro-PL system excited by a 325-nm He-Cd laser. The fabricated nanolasers are able to demonstrate lasing behaviour with an optical pumping power density as low as 0.3 kW/cm 2 at room temperature and a quality Q~factor of up to about 120. The low lasing threshold is attributed to the SPP coupling-induced strong electric field confinement in the MOS structures and optimization of MOS structure. In accordance with the theoretical and experimental results, the size and shape of the nanorod (NR) are key for the lasing modes and reduction in loss. We believe geometrical and technical optimization can further enhance the lasing properties. These achievements should extend the size range of lasers to the subwavelength scale and allow hybridization of their lasing modes, which could be vital for information processing applications. References[1] Y.

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Review of recent progress of III-nitride nanowire lasers

Cited by 100 publications

References 139 publications

Nanowire Lasers

Nanowire Lasers

Influence of GaN column diameter on structural properties for InGaN nanocolumns grown on top of GaN nanocolumns

Plasmonic Laser Using InGaN/GaN Nanorods with Different Shapes

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