Review Article: Recommended reading list of early publications on atomic layer deposition—Outcome of the “Virtual Project on the History of ALD”

Ahvenniemi, Esko; Akbashev, Andrew R.; Ali, Saima; Bechelany, Mikhaël; Berdova, Maria; Boyadjiev, Stefan Ivanov; Cameron, D.C.; Chen, Rong; Chubarov, Mikhail; Cremers, Véronique; Devi, Anjana; Дрозд, В. Е.; Elnikova, L. V.; Gottardi, Gloria; Grigoras, Kestutis; Hausmann, Dennis M.; Hwang, Cheol Seong; Jen, Shih Hui; Kallio, Tanja; Kanervo, Jaana; Khmelnitskiy, Ivan K.; Kim, Do Han; Klibanov, L.; Koshtyal, Yury; Krause, A.O.I.; Kuhs, Jakob; Kärkkänen, Irina; Kääriäinen, Marja Leena; Kääriäinen, Tommi; Lamagna, L.; Łapicki, Adam; Leskelä, Markku; Lipsanen, Harri; Lyytinen, Jussi; Малков, А. А.; Малыгин, А. А.; Mennad, Abdelkader; Militzer, Christian; Molarius, Jyrki; Norek, Małgorzata; Özgit-Akgün, Çaǧla; Panov, M. F.; Pedersen, Henrik; Piallat, F.; Popov, Georgi; Puurunen, Riikka L.; Rampelberg, Geert; Ras, Robin H. A.; Rauwel, Erwan; Roozeboom, F.; Sajavaara, Timo; Salami, Hossein; Savin, Hele; Schneider, Nathanaëlle; Seidel, Thomas E.; Sundqvist, Jonas; Suyatin, Dmitry; Törndahl, Tobias; Ommen, J. Ruud van; Wiemer, C.; Ylivaara, Oili; Yurkevich, Oksana

doi:10.1116/1.4971389

Cited by 77 publications

(41 citation statements)

References 18 publications

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“…According to a recent review (Ahvenniemi, 2017), ALD was invented and developed independently with different names: molecular layering (ML) since the 1960s in the Soviet Union (Ahvenniemi, 2017;Shevjakov, 1967;Mokrushin, 2019), and atomic layer epitaxy (ALE) since the 1970s in Finland (Ahvenniemi, 2017;Suntola, 1977). In addition to ALD (Leskelä, 1990) it has also been called molecular deposition (Aleskovskii, 1979), atomic layer evaporation (ALE) (Ahonen, 1980), molecular stratification (Malygin, 1980), molecular lamination (Kopylov, 1981), chemical assembly (Egorov, 1984), molecular layer epitaxy (MLE) (Nishizawa, 1985) and atomic layer growth (ALG) (Aoyagi, 1987).…”

Section: Atomic Layer Deposition (Ald)mentioning

confidence: 99%

“…In addition to ALD (Leskelä, 1990) it has also been called molecular deposition (Aleskovskii, 1979), atomic layer evaporation (ALE) (Ahonen, 1980), molecular stratification (Malygin, 1980), molecular lamination (Kopylov, 1981), chemical assembly (Egorov, 1984), molecular layer epitaxy (MLE) (Nishizawa, 1985) and atomic layer growth (ALG) (Aoyagi, 1987). ALE is commonly known as the origin of ALD (Ahvenniemi, 2017).…”

Section: Atomic Layer Deposition (Ald)mentioning

confidence: 99%

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Nanotribological, nanomechanical and interfacial characterization of atomic layer deposited TiO2 on a silicon substrate

Lyytinen

Liu

Ylivaara

et al. 2015

Wear

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Section: Atomic Layer Deposition (Ald)mentioning

confidence: 99%

Section: Atomic Layer Deposition (Ald)mentioning

confidence: 99%

Nanotribological, nanomechanical and interfacial characterization of atomic layer deposited TiO2 on a silicon substrate

Lyytinen

Liu

Ylivaara

et al. 2015

Wear

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“…The three-dimensional uniformity, also termed "conformality," is a consequence of the systematic use of repeated, selfterminating (saturating, irreversible), separated gas-solid reactions of at least two compatible compounds [1][2][3][4][5][6]. While the principles of ALD were formulated already in the 1960s and 1970s, independently twice [7][8][9][10][11][12][13][14], it was in the 1990s that ALD was promoted as a tool for nanotechnology [15] and during the 2000s that ALD has enabled the continuation of Moore's law of transistor miniaturisation [16]. By the end of 2010, over 700 two-reactant ALD processes had been developed [17].…”

Section: Introductionmentioning

confidence: 99%

Nickel Supported on Mesoporous Zirconium Oxide by Atomic Layer Deposition: Initial Fixed-Bed Reactor Study

et al. 2019

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Atomic layer deposition (ALD) is gaining attention as a catalyst preparation method able to produce metal (oxide, sulphide, etc.) nanoparticles of uniform size down to single atoms. This work reports our initial experiments to support nickel on mesoporous zirconia. Nickel (2,2,6,6-tetramethyl-3,5-heptanedionate) 2 [Ni(thd) 2 ] was reacted in a fixed-bed ALD reactor with zirconia, characterised with BET surface area of 72 m 2 /g and mean pore size of 14 nm. According to X-ray fluorescence measurements, the average nickel loading on the top part of the support bed was on the order of 1 wt%, corresponding to circa one nickel atom per square nanometre. Cross-sectional scanning electron microscopy combined with energy-dispersive spectroscopy confirmed that in the top part of the fixed support bed, nickel was distributed throughout the zirconia particles. X-ray photoelectron spectroscopy indicated the nickel oxidation state to be two. Organic thd ligands remained complete on the surface after the Ni(thd) 2 reaction with zirconia, as followed with diffuse reflectance infrared Fourier transform spectroscopy. The ligands could be fully removed by oxidation at 400 °C. These initial results indicate that nickel catalysts on zirconia can likely be made by ALD. Before catalytic testing, in addition to increasing the nickel loading by repeated ALD cycles, optimization of the process parameters is required to ensure uniform distribution of nickel throughout the support bed and within the zirconia particles.Publisher's Note Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.

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“…To attain a certain thickness, a determined number of cycles is performed. A review of the origins of ALD and a recommended reading list can be found in Reference [2].…”

Section: Introductionmentioning

confidence: 99%

Influence of the Geometric Parameters on the Deposition Mode in Spatial Atomic Layer Deposition: A Novel Approach to Area-Selective Deposition

et al. 2018

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Within the materials deposition techniques, Spatial Atomic Layer Deposition (SALD) is gaining momentum since it is a high throughput and low-cost alternative to conventional atomic layer deposition (ALD). SALD relies on a physical separation (rather than temporal separation, as is the case in conventional ALD) of gas-diluted reactants over the surface of the substrate by a region containing an inert gas. Thus, fluid dynamics play a role in SALD since precursor intermixing must be avoided in order to have surface-limited reactions leading to ALD growth, as opposed to chemical vapor deposition growth (CVD). Fluid dynamics in SALD mainly depends on the geometry of the reactor and its components. To quantify and understand the parameters that may influence the deposition of films in SALD, the present contribution describes a Computational Fluid Dynamics simulation that was coupled, using Comsol Multiphysics®, with concentration diffusion and temperature-based surface chemical reactions to evaluate how different parameters influence precursor spatial separation. In particular, we have used the simulation of a close-proximity SALD reactor based on an injector manifold head. We show the effect of certain parameters in our system on the efficiency of the gas separation. Our results show that the injector head-substrate distance (also called deposition gap) needs to be carefully adjusted to prevent precursor intermixing and thus CVD growth. We also demonstrate that hindered flow due to a non-efficient evacuation of the flows through the head leads to precursor intermixing. Finally, we show that precursor intermixing can be used to perform area-selective deposition.

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Review Article: Recommended reading list of early publications on atomic layer deposition—Outcome of the “Virtual Project on the History of ALD”

Abstract: International audienc

Cited by 77 publications

References 18 publications

Nanotribological, nanomechanical and interfacial characterization of atomic layer deposited TiO2 on a silicon substrate

Nanotribological, nanomechanical and interfacial characterization of atomic layer deposited TiO2 on a silicon substrate

Nickel Supported on Mesoporous Zirconium Oxide by Atomic Layer Deposition: Initial Fixed-Bed Reactor Study

Influence of the Geometric Parameters on the Deposition Mode in Spatial Atomic Layer Deposition: A Novel Approach to Area-Selective Deposition

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