Influence of the Geometric Parameters on the Deposition Mode in Spatial Atomic Layer Deposition: A Novel Approach to Area-Selective Deposition

Huerta, César Masse de la; Nguyễn, Việt Hương; Dedulle, Jean-Marc; Bellet, Daniel; Jiménez, Carmen; Muñoz‐Rojas, David

doi:10.3390/coatings9010005

Cited by 27 publications

(32 citation statements)

References 21 publications

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“…The AP-SALD approach eliminates the evacuation and purge steps that make conventional ALD slow, and it does not require a vacuum chamber, which makes it scalable and potentially less costly. Furthermore, by adjusting the reactor-substrate spacing and/or flow rates, the system can deposit by chemical vapor deposition('CVD mode') [1], where some mixing of the precursors occurs in the gas phase. This atmospheric pressure chemical vapor deposition (AP-CVD) generally results in accelerated film deposition rates, while still producing conformal, pinhole-free films [2].…”

Section: Introductionmentioning

confidence: 99%

In-situ observation of nucleation and property evolution in films grown with an atmospheric pressure spatial atomic layer deposition system

et al. 2020

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Atmospheric pressure-spatial atomic layer deposition (AP-SALD) is a promising open-air deposition technique for high-throughput manufacturing of nanoscale films, yet the nucleation and property evolution in these films has not been studied in detail. In this work, in situ reflectance spectroscopy was implemented in an AP-SALD system to measure the properties of Zinc oxide (ZnO) and Aluminum oxide (Al 2 O 3 ) films during their deposition. For the first time, this revealed a substrate nucleation period for this technique, where the length of the nucleation time was sensitive to the deposition parameters. The in situ characterization of thickness showed that varying the deposition parameters can achieve a wide range of growth rates (0.1-3 nm/cycle), and the evolution of optical properties throughout film growth was observed. For ZnO, the initial bandgap increased when deposited at lower temperatures and subsequently decreased as the film thickness increased. Similarly, for Al 2 O 3 the refractive index was lower for films deposited at a lower temperature and subsequently increased as the film thickness increased. Notably, where other implementations of reflectance spectroscopy require previous knowledge of the film's optical properties to fit the spectra to optical dispersion models, the approach developed here utilizes a large range of initial guesses that are inputted into a Levenberg-Marquardt fitting algorithm in parallel to accurately determine both the film thickness and complex refractive index.

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Section: Introductionmentioning

confidence: 99%

In-situ observation of nucleation and property evolution in films grown with an atmospheric pressure spatial atomic layer deposition system

et al. 2020

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“…[53] In addition, we have shown in the past that the SCVD mode can be used to do selective deposition of lines when doing a static deposition (i.e., with an immobile substrate, since precursors can only meet in certain regions below the head if the deposition is static). [51] By combining this static deposition mode with the high flexibility in designing the injection head that 3D printing allows, SCVD heads can be easily fabricated to deposit freeform patterns. Figure 3b shows the 3D scheme of a head in which the outlets have a circular shape instead of the straight outlets normally used in SALD.…”

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confidence: 99%

Gas‐Phase 3D Printing of Functional Materials

Huerta

Nguyễn

Sekkat

et al. 2020

Adv Materials Technologies

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Furthermore lithography and patterning are often performed in cleanrooms, thus adding to the cost of the final devices. In this context, there have been much progress in bringing the resolution of inkjet printing down to the micrometer level. [6] And other new bottom-up strategies are being developed, for example based on microfluidics and interfacial convective assembly. [7,8] Another new approach to so-called area-selective deposition (ASD) has been developed in the last years in the field of atomic layer deposition (ALD). [3,9] In ALD, solid-gas, surface-limited, selfterminating reactions take place. [10-12] This results in very compact and continuous thin films with a sub-nanometer thickness control and unique conformality, key assets for engineering the interfaces and surfaces of different functional materials and devices. [13-16] Given the surface-limited nature of ALD, several strategies can be implemented to control the reactivity of ALD precursors toward different surfaces to generate selectivity and result in ASD. These involve the use of a substrate with different materials (growth inhibition or delay taking place in one of them) or the use of self-assembled monolayers to block the growth in certain parts of the surface, as recently reviewed by Mackus et al. [17] While these approaches are very appealing and have proven to be efficient, there is still the need to have a surface with different materials, and in most cases a prepatterning step is necessary. Also, some of the ASD approaches require intermediate etching steps. [18] Finally, these approaches suffer from the inherent low deposition rate of ALD and the use of expensive vacuum equipment. In the last years, spatial ALD (SALD) has established itself as a high-throughput, low-cost alternative to conventional ALD. SALD is based on the spatial separation of precursors, as opposed to the sequential (temporal) separation in ALD. [19,20] Thus, precursors are continuously injected in different locations, which are spatially separated by an inert gas region. As the sample is exposed to the different regions, the standard ALD cycle is reproduced. Because no purge steps are needed, SALD can be up to two orders of magnitude faster than ALD. [21,22] In addition, SALD can be performed at atmospheric pressure (AP-SALD), thus resulting more convenient for scalingup than vacuum-based ALD. [23-25] But because SALD is based on the same surface-limited, self-terminating chemistry than Spatial atomic layer deposition (SALD) is a recent approach 100 times faster than conventional atomic layer deposition (ALD), even at atmospheric pressure. Previous works exploited these assets focussing on high-rate, large-area deposition for scaling-up into mass production. Conversely, this work shows that SALD indeed represents an ideal platform for area-selective deposition of functional materials by proper design and miniaturization of close-proximity SALD heads. In particular, the potential offered by 3D printing is used to fabricate low-cost customized close-proximity heads, w...

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“…The atomic layer deposition (ALD) offers the technology for uniform materials deposition and design of the device's structures with controllable thickness [209]. Precisely low substrate temperature, but the new approach to this technology called Spatial ALD (SALD) has continued to gain momentum, which is based on separating the precursors in space (physical separation) rather than separating in time (temporal separation) [210]. The reported study [211] on SALD methods using ZnO thin film suggests that the lower substrate temperature limit at constant precursor partial pressures during the deposition lies between 100 -150 o C. Also, the precursor exposure times should be varied from 25 -400 ms. SALD can also sustain deposition of substrate temperature varied up to 300 o C highest limit.…”

Section: Effect Of Deposition Parametersmentioning

confidence: 99%

ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory

et al. 2021

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Numerous works that have demonstrated the study and enhancement of switching properties of ZnO-based RRAM devices are discussed. Several native point defects that have a direct or indirect effect on ZnO are discussed. The use of doping elements, multi-layered structures, suitable bottom and top electrodes, controlling the deposition materials, and the impact of hybrid structure for enhancing the switching dynamics are discussed. The potentials of ZnO-based RRAM for invisible and bendable devices are also covered. ZnO-based RRAM has the potential for possible application in bio-inspired cognitive computational systems. Thus, the synapse capability of ZnO is presented. The sneak-path current issue also besets ZnO-based RRAM crossbar array architecture. Hence, various attempts to subdue the bottleneck have been shown and discussed in this article. Interestingly, ZnO provides not only helpful memory features. However, it demonstrates the ability to be used in nonvolatile multifunctional memory devices. Also, this review covers various issues like the effect of electrodes, interfacial layers, proper switching layers, appropriate fabrication techniques, and proper annealing settings. These may offer a valuable understanding of the study and development of ZnO-based RRAM and should be an avenue for overcoming RRAM challenges.

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Influence of the Geometric Parameters on the Deposition Mode in Spatial Atomic Layer Deposition: A Novel Approach to Area-Selective Deposition

Cited by 27 publications

References 21 publications

In-situ observation of nucleation and property evolution in films grown with an atmospheric pressure spatial atomic layer deposition system

In-situ observation of nucleation and property evolution in films grown with an atmospheric pressure spatial atomic layer deposition system

Gas‐Phase 3D Printing of Functional Materials

ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory

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