Review and Reexamination of Reliability Effects Related to NBTI-Induced Statistical Variations

Statistical prediction of circuit aging under process variations

“…www.intechopen.com A few works have been published in the literature to estimate the statistical variations in temporal NBTI degradation (Rauch, 2002;2007;Rosa et al, 2006;Kang et al, 2007). Their assumption is the number of broken bonds in the channel is a Poisson random variable, and correspondingly V th follows the Poisson distribution.…”

Accurate capturing of the statistical aspect of NBTI/PBTI variability into statistical compact models

“…However, due to random variation of the number and spatial positions of traps within any given transistor, there is significant statistical variation in the V T degradation even when the devices are subjected to similar stress conditions. This results in an additional V T variation component on top of the V T variation of 'fresh' transistors caused by the RDD and other statistical variability sources [24,25]. Neglecting this statistical aspect of BTI degradation may result in a significant error in estimating the lifetime of the circuits.…”

Trends and perspectives for electrical characterization and reliability assessment in advanced CMOS technologies

“…With the shrinking of lateral device dimensions to atomic levels, variations between devices appear due to effects such as random dopant fluctuations and line edge roughness [48][49]. Similarly, application of a fixed stress in such devices results in a distribution of the parameter shifts [50][51]. Understanding these distributions is crucial for correctly predicting the reliability of future deeply downscaled technologies [52].…”