Reversible voltage dependent transition of abnormal and normal bipolar resistive switching

Abstract

Clear understanding the mechanism of resistive switching is the important prerequisite for the realization of high performance nonvolatile resistive random access memory. In this paper, binary metal oxide MoOx layer sandwiched by ITO and Pt electrodes was taken as a model system, reversible transition of abnormal and normal bipolar resistive switching (BRS) in dependence on the maximum voltage was observed. At room temperature, below a critical maximum voltage of 2.6 V, butterfly shaped I-V curves of abnormal BRS has been observed with low resistance state (LRS) to high resistance state (HRS) transition in both polarities and always LRS at zero field. Above 2.6 V, normal BRS was observed, and HRS to LRS transition happened with increasing negative voltage applied. Temperature dependent I-V measurements showed that the critical maximum voltage increased with decreasing temperature, suggesting the thermal activated motion of oxygen vacancies. Abnormal BRS has been explained by the partial compensation of electric field from the induced dipoles opposite to the applied voltage, which has been demonstrated by the clear amplitude-voltage and phase-voltage hysteresis loops observed by piezoelectric force microscopy. The normal BRS was due to the barrier modification at Pt/MoOx interface by the accumulation and depletion of oxygen vacancies.

Improved Resistive Switching Observed in Ti/Zr3N2/p-Si Capacitor via Hydrogen Passivation

“…Meanwhile, according to the reported literature related to H 2 annealing [37], [38], it is well-known that hydrogen allows a different bonding energy depending on electronegativity of molecules such as N-H, N-O, N-Zr, and N-F, which are dipole-inducing forms. Especially, in the negative bias region, the current at LRS is lower than that at HRS because of the internal electric field induced by the formed dipole, which results in a negative shift in the I − V curve characteristics [39], [40]. Then, if we use V read = +0.1 V, currents at HRS and LRS are 0.125 nA and 3.696 nA, and the current ratio (CR) between HRS and HRS is about 29.6.…”

Metastable oxygen vacancy ordering state and improved memristive behavior in TiO2 crystals

“…They were polarized by the applied field. The polarization induced an electric field opposite to the applied field [40], which made the actual field in the sample smaller than the applied field. As the voltage increased, the V O s might have been electrically delocalized, leading to a reduction in the number of localized V O s. Therefore, the resistance of the forward branch was in a higher resistance state (HRS) and decreased as the voltage increased.…”

Characterization of PVC/MWCNTs Nanocomposite: Solvent Blend

“…This was attributed to the increases of chain mobility (previously discussed). The trajectory of electrical hysteresis, shown in Figure 6, takes the form of butterfly wings, and it is a well-known phenomena in many prop- erties [40][41][42][43]. This butterfly shape is produced due to the presence of delay or lag between the applied driving parameter and sample response.…”