Reversible Domain-Wall-Motion-Induced Low-Hysteretic Piezoelectric Response in Ferroelectrics

Abstract

The mobility of domain walls under an external stimulus plays a crucial role in the piezoelectricity of ferroelectric materials, which usually manifests itself as an irreversible and hysteretic characteristic. Herein, we report a reversible domain-wall motion that contributes almost 55% to the significant piezoelectric response ( d 33 * = 730 pm/V) with low strain hysteresis (H S = 10.76%) at a composition close to the morphotropic phase boundary (MPB) in a (1 − x)Ba(Ti 0.88 Sn 0.12 )O 3 −x(Ba 0.7 Ca 0.3 )TiO 3 system. Such a reversible domain-wall motion is evidenced by the piezo response force microscopy measurement. Moreover, transmission electron microscopy observation indicates a hierarchical domain structure for MPB composition (x = 0.28), and the associated highresolution image suggests the presence of spatial local chemical heterogeneity. Combined with phase field modeling, we reveal that the reversible domain-wall motion is attributed to the asymmetric landau free energy profile as a result of morphotropic phase boundary incorporation with the local heterogeneity. Our work may advance the development of lowhysteretic piezoelectric materials in the application of energy converter or other devices with low energy consumption and high precision.

Nano-domains in lead-free piezoceramics: a review

“…42 The subsequent analysis indicates that both phase structure and domain configuration are responsible for the enhanced piezoelectric properties. 305,360,[367][368][369][370][371][372][373][374][375][376][377][378][379][380][381][382][383][384][385][386] In this section, the effects of nano-domains on BT-based ceramics are thus summarized.…”

Sb2O3‐modified lead zirconate titanate piezoelectric ceramics with enhancing piezoelectricity and low loss

“…With increasing temperature, the S max of x = 0.1 ceramic increased monotonically, and the change rate was less than 30%. Domain motion was known to be more active at high temperatures, which promoted piezoelectric properties 24 . High temperature would also cause lattice deformation.…”

“…In order to distinguish d latt and d re-dw , the unipolar strains under high electric field (3.0 kV/mm) were measured and exhibit a linear increase in high electric field region, as shown in Figure 4C, which is attributed to the minimal domain wall contribution as a result of the domain clamping under high electric field. [23][24][25] Therefore, the d latt is estimated by the slope of strain over high electric field region as shown in Table S2. Figure 4D shows an AC electric field-related d 33 (E 0 ) of (xSb, Mn)-doped PSZTN ceramics.…”

Additive Manufacturing of Piezoelectric Materials

“…[149][150][151] This is due to the adjustment of the binding state at the interface, such as lattice matching, interface components, stress and strain, to improve residual polarization, promote polarization rotation, and enhance the spontaneous polarization ability and domain wall motion speed. [152][153][154] In addition, the oriented Figure 18. Prospects for future development to piezoelectric materials prepared by additive manufacturing.…”

“…[ 149–151 ] This is due to the adjustment of the binding state at the interface, such as lattice matching, interface components, stress and strain, to improve residual polarization, promote polarization rotation, and enhance the spontaneous polarization ability and domain wall motion speed. [ 152–154 ] In addition, the oriented polycrystal not only suggests the excellent piezoelectric performance of a single crystal, but also reflects the performance superposition multiplier effect brought about by the uniform orientation of the polycrystalline structure. [ 155,156 ] The construction of high‐density heteroepitaxial interface‐oriented piezoelectric nanocomplex provides a path for the development of new high‐performance lead‐free piezoelectric materials and has great potential for the fabrication of high‐performance piezoelectric devices. Improvement of packaging technology: The packaging of piezoelectric components plays a role in the mechanical and environmental protection of the circuit, so that it can improve the stability, safety, and service life of electronic components.…”