“…Hugues Francois-Saint-Cyr 1 , Isabelle Martin 1 , Paula Peres 2 , Christelle Guillermier 3 , Ty Prosa 1 , Wilfried Blanc 4 and David Larson 1 1 CAMECA Instruments Inc., Madison, Wisconsin, United States, 2 CAMECA S.A., Gennevilliers, Ile-de-France, France, 3 ZEISS SMT Inc., Peabody, Massachusetts, United States, 4 Université Nice-Sophia Antipolis, Nice, Provence-Alpes-Cote d'Azur, France Engineers and scientists in both academic and industrial environments currently rely on a fleet of analytical methods to gain full understanding on technologies and processes, or to explore novel research ideas. However, all the characterization techniques populating the resolution-sensitivity landscape have their own strengths and shortcomings [1].…”
Section: Secondary Ion Mass Spectrometry (Sims) and Atom Probe Tomogrmentioning
This is an Accepted Manuscript for the Microscopy and Microanalysis 2020 Proceedings. This version may be subject to change during the production process.
“…Hugues Francois-Saint-Cyr 1 , Isabelle Martin 1 , Paula Peres 2 , Christelle Guillermier 3 , Ty Prosa 1 , Wilfried Blanc 4 and David Larson 1 1 CAMECA Instruments Inc., Madison, Wisconsin, United States, 2 CAMECA S.A., Gennevilliers, Ile-de-France, France, 3 ZEISS SMT Inc., Peabody, Massachusetts, United States, 4 Université Nice-Sophia Antipolis, Nice, Provence-Alpes-Cote d'Azur, France Engineers and scientists in both academic and industrial environments currently rely on a fleet of analytical methods to gain full understanding on technologies and processes, or to explore novel research ideas. However, all the characterization techniques populating the resolution-sensitivity landscape have their own strengths and shortcomings [1].…”
Section: Secondary Ion Mass Spectrometry (Sims) and Atom Probe Tomogrmentioning
This is an Accepted Manuscript for the Microscopy and Microanalysis 2020 Proceedings. This version may be subject to change during the production process.
“…Because of the proximity of the counter electrode in a SAP, the electric field was notably higher than with a remote counter electrode. This made it possible to lower the amplitude of the voltage pulse required, which made it possible to achieve several orders of magnitude greater pulse repetition Reprinted with permission from [28]. Copyright 2014 Cambridge University Press.…”
Section: Toward Higher Performancementioning
confidence: 99%
“…The local electrode was the key to these improvements, and the instrument was called the local electrode atom probe or LEAP [26–27]. Figure 6 shows a schematic of the key components [28]. Figure 6 Schematic of a local electrode atom probe (LEAP).…”
Section: Toward Higher Performancementioning
confidence: 99%
“…MC is a microtip coupon, LP is a laser pulse, LE is the local electrode, and PSD is the position-sensitive detector. Reprinted with permission from [28]. Copyright 2014 Cambridge University Press. …”
Section: Toward Higher Performancementioning
confidence: 99%
“…The unique strength of APT lies in its ability to determine compositions in 3D. Figure 7 shows an atom cloud of a reconstructed dataset taken from a commercial blue light-emitting diode [28]. A complex structure is apparent.…”
With a brief look to historical precedence, the birth of atom probe and its key evolutionary steps are recounted: from the earliest field emission experiments to the latest three-dimensional competitive analysis of advanced light emitting diodes. We note that electron microscopy and atom probe have been almost sibling twentiethcentury technologies that provide atomic-level imaging. Given the rate of development, the next fifty years should be even more amazing.
In this paper, state‐of‐the‐art Atom Probe Tomography (APT) on industrial semiconductor products is reviewed to explore their device physics and to develop an understanding of atomic‐scale interfaces in them. Different semiconductor devices, such as Light Emitting Diodes (LEDs), High‐Electron‐Mobility Transistors (HEMTs), Field‐Effect Transistors (FETs), Metal‐Oxide‐Semiconductor Field‐Effect Transistors (MOSFETs), Static or Dynamic Random Access Memory (SRAM or DRAM) and solar cells, have been reviewed in light of their surface morphologies, chemical compositions, dopant distributions, grain boundaries and interface characteristics. The APT approach allows for the further optimization of device techniques, which are suggested for better performance.
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