Retarded and enhanced dopant diffusion in silicon related to implantation-induced excess vacancies and interstitials

Abstract

The influence of the lattice defects induced by silicon-ion implantation on the B, P, As, and Sb diffusivities is investigated after annealing between 700 and 900 °C. The nature and depth position of the residual implantation defects in undoped samples is determined by the analysis of the rocking curves obtained by triple-crystal x-ray diffraction and transmission electron microscopy. In particular, besides the interstitial dislocation loops and clusters below the original amorphous-crystal interface, the epitaxial regrowth of the amorphized silicon leaves a vacancy-rich surface layer and a deeper region enriched in interstitials. These regions correspond to those where Monte Carlo simulations of defect production foresee excess point defects. Accordingly, as the dopant is located in correspondence with the vacancy or interstitial clusters, different behaviors of anomalous diffusion are observed. In the deep region where an interstitial excess is present, B and P show marked enhanced diffusion, while only a small enhancement is exhibited by As and Sb. On the contrary, retarded diffusivity for B and light enhancement for As and Sb are observed in the surface layer. These different trends are consistent with the different accepted contributions of vacancies and interstitials to the diffusion mechanisms of the investigated dopants.

High-resolution X-ray diffraction by end of range defects in self-amorphized Ge

“…Both the maximum ε ⊥ location and its sign, which testifies the presence of interstitial-type defects, are the fingerprint of EOR defects [18,19]. It is noteworthy that the above reported data are qualitatively very similar to HRXRD results obtained on Si EOR defects [19,20].…”

Ion Implantation Processing Technologies for Telecommunications Electronics

“…3(c)] that is similar to that of the sample impkmted with 6X 10]6cm A. Agartt,u{ et al j Mu[eriafs Science in Semiconductor Processing I (1998) 17-2S dominant contribution to junction depth when RP k reduced to depths of the order of 10 nm [3][4][5][6][7]. The defect formation and dissohttion behavior for low-energy implants (i.e.…”

“…leaving excess interstitiaki, approximately equal in number to the implanted dose, which then coalesce into extended defects [4,5] [8][9][10]. With further annealing, these {311} defects dissolve, releasing interstitial [8].…”

“…The payoffs from these indirect contributions to manufacturing technology will be realized in [4][5][6][7][8][9][10] Agarwal, cited in Semiconductor International 20 (4) p. 54 (April 1997);and . Solid State Technology 40 (7), p. 78 (July 1997) (c-Si), such as B and P, are subjected to thermaf annealing.…”

“…This equilibrium partitioning of Fe is extremely effective at temperatures below 400 'C,~d Symp. Proc.262,917 (1992 105O"Cfor 10 s. and with 0.5,1,2,5, Fig. 4 the time-averaged boron diffusivity (DE) and its error were extracted by fitting the experimental data with simulated diffused profiles using the process simulator PROPHET [23.…”