Copper centers in copper-diffused n-type silicon measured by photoluminescence and deep-level transient spectroscopy Appl. Phys. Lett. 101, 042113 (2012) Bonding and diffusion of nitrogen in the InSbN alloys fabricated by two-step ion implantation Appl. Phys. Lett. 101, 021905 (2012) Shift of Ag diffusion profiles in CdTe by metal/semiconductor interfaces Appl. Phys. Lett. 100, 171915 (2012) Diffusion of co-implanted carbon and boron in silicon and its effect on excess self-interstitials Implanted B and P dopants in Si exhibit transient enhanced diffusion ͑TED͒ during annealing which arises from the excess interstitials generated by the implant. In order to study the mechanisms of TED, transmission electron microscopy measurements of implantation damage were combined with B diffusion experiments using doping marker structures grown by molecular-beam epitaxy ͑MBE͒. Damage from nonamorphizing Si implants at doses ranging from 5ϫ10 12 to 1ϫ10 14 /cm 2 evolves into a distribution of ͕311͖ interstitial agglomerates during the initial annealing stages at 670-815°C. The excess interstitial concentration contained in these defects roughly equals the implanted ion dose, an observation that is corroborated by atomistic Monte Carlo simulations of implantation and annealing processes. The injection of interstitials from the damage region involves the dissolution of ͕311͖ defects during Ostwald ripening with an activation energy of 3.8Ϯ0.2 eV. The excess interstitials drive substitutional B into electrically inactive, metastable clusters of presumably two or three B atoms at concentrations below the solid solubility, thus explaining the generally observed immobile B peak during TED of ion-implanted B. Injected interstitials undergo retarded diffusion in the MBE-grown Si with an effective migration energy of ϳ3.5 eV, which arises from trapping at substitutional C. The concept of trap-limited diffusion provides a stepping stone for understanding the enormous disparity among published values for the interstitial diffusivity in Si. The population of excess interstitials is strongly reduced by incorporating substitutional C in Si to levels of ϳ10 19 /cm 3 prior to ion implantation. This provides a promising method for suppressing TED, thus enabling shallow junction formation in future Si devices through dopant implantation. The present insights have been implemented into a process simulator, allowing for a significant improvement of the predictive modeling of TED.
We study the ultrafast insulator-to-metal transition in nanoparticles of VO2, obtained by ion implantation and self-assembly in silica. The nonmagnetic, strongly correlated compound VO2 undergoes a reversible phase transition, which can be photoinduced on an ultrafast time scale. In the nanoparticles, prompt formation of the metallic state results in the appearance of surface-plasmon resonance. We achieve large, ultrafast enhancement of optical absorption in the near-infrared spectral region that encompasses the wavelength range for optical-fiber communications. One can further tailor the response of the nanoparticles by controlling their shape.
Vanadium dioxide single-crystal precipitates with controlled particle sizes were produced in an amorphous, fused SiO2 host by the stoichiometric coimplantation of vanadium and oxygen ions and subsequent thermal processing. The effects of the vanadium dioxide nanocrystal size, nanocrystal morphology, and particle/host interactions on the VO2 semiconductor-to-metal phase transition were characterized. VO2 nanoparticles embedded in amorphous SiO2 exhibit a sharp phase transition with a hysteresis that is up to 50 °C in width—one of the largest values ever reported for this transition. The relative decrease in the optical transmission in the near-infrared region in going from the semiconducting to the metallic phase of VO2 ranges from 20% to 35%. Both the hysteresis width and the transition temperature are correlated with the size of the precipitates. Doping the embedded VO2 particles with ions such as titanium alters the characteristics of the phase transition, pointing the way to control the hysteresis behavior over a wide range of values and providing insight into the operative physical mechanisms.
Z -scan and pump-probe measurements with ultrafast, 800nm laser pulses were used to compare the ultrafast optical nonlinearities of VO2 nanoparticles and thin films in both semiconducting and metallic states. In the metallic state, both the nanocrystals and thin films exhibit a positive, intensity-dependent nonlinear index of refraction. However, the nonlinear effects are relatively larger in the VO2 nanocrystals, which also reveal a saturable nonlinear absorption. When the semiconductor-to-metal phase transition is induced by the laser pulse, VO2 thin films exhibit a negative equivalent nonlinear index of refraction while the nanocrystals exhibit a smaller but still positive index. Both the VO2 nanocrystals and thin films undergo the phase transition within 120fs.
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