Results on proton-irradiated 3D pixel sensors interconnected to RD53A readout ASIC

Duarte-Campderros, J.; Currás, E.; Fernández, M.; Gómez, G.; García, Adolfo Cobo; González, J.; Silva, E.; Vila, I.; Jaramillo, R.; Meschini, M.; Ceccarelli, R.; Gennai, S.; Moroni, L.; Zuolo, D.; Demaria, L.; Monteil, E.; Gaioni, L.; Messineo, A.; Betta, G.-F. Dalla; Mendicino, R.; Boscardin, M.; Hidalgo, S.; Merlos, A.; Pellegrini, G.; Quirion, D.; Manna, M.

doi:10.1016/j.nima.2019.162625

Cited by 8 publications

(6 citation statements)

References 10 publications

(11 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Equivalent results have been obtained for FBK produced sensors [21], showing similar performances (see Fig. 7), as well as similar depletion voltages: sensors irradiated at 1 × 10 16 n eq cm −2 fully depletes around 120-150 V.…”

Section: Test Beam Characterizationsupporting

confidence: 55%

Pixelated 3D Sensors for Tracking in Radiation Harsh Environments

Duarte-Campderros

2021

Proceedings of the 29th International Workshop on Vertex Detectors (VERTEX2020)

View full text Add to dashboard Cite

The High Luminosity upgrade of the CERN Large Hadron Collider will be able to reach a peak instantaneous luminosity of 5 × 10 34 cm −2 s −1 . The innermost detectors of the CMS and ATLAS experiments will have to cope with unprecedented requirements on radiation hardness. At the end of the operation period, radiation levels are expected to reach values above 2.6 × 10 16 n eq cm −2 . Sensors based on 3D pixel technology, with intrinsic radiation tolerance, are the baseline option for the innermost layers of the vertex detectors of several HL-LHC experiments. This article gives an overview of the ongoing characterization of the pixelated 3D sensor technology, their performance and their current development status for tracking on radiation harsh environments.

show abstract

Section: Test Beam Characterizationsupporting

confidence: 55%

Pixelated 3D Sensors for Tracking in Radiation Harsh Environments

Duarte-Campderros

2021

Proceedings of the 29th International Workshop on Vertex Detectors (VERTEX2020)

View full text Add to dashboard Cite

show abstract

“…A 3D silicon pixel detector has been used in high-energy particle physics for precise position measurements, such as ATLAS Insertable B-Layer [12] and CMS-TOTEM Precision Proton Spectrometer [13], because of its superior radiation hardness. The 3D silicon pixel detector does not show significant degradation after 1 × 10 16 n eq /cm 2 irradiation [7], and a 3D silicon strip detector still has a relative charge collection efficiency of 70% after 2 × 10 16 n eq /cm 2 irradiation [14].…”

Section: Introductionmentioning

confidence: 97%

“…One possible device to solve these challenges is a 3D silicon carbide (SiC) detector. 3D is a reliable technology to develop radiation hardness detectors [6,7], and SiC materials have the potential to work at room temperature or higher [8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Timing Performance Simulation for 3D 4H-SiC Detector

et al. 2021

View full text Add to dashboard Cite

To meet the high radiation challenge for detectors in future high-energy physics, a novel 3D 4H-SiC detector was investigated. Three-dimensional 4H-SiC detectors could potentially operate in a harsh radiation and room-temperature environment because of its high thermal conductivity and high atomic displacement threshold energy. Its 3D structure, which decouples the thickness and the distance between electrodes, further improves the timing performance and the radiation hardness of the detector. We developed a simulation software—RASER (RAdiation SEmiconductoR)—to simulate the time resolution of planar and 3D 4H-SiC detectors with different parameters and structures, and the reliability of the software was verified by comparing the simulated and measured time-resolution results of the same detector. The rough time resolution of the 3D 4H-SiC detector was estimated, and the simulation parameters could be used as guideline to 3D 4H-SiC detector design and optimization.

show abstract

“…With further development of this technology, some variants of the devices have been proposed, such as the single type column (3D-STC) [6], one sided 3D detector [7][8][9], doubleside double-type column detector [10][11][12][13][14][15][16], hybird pixel detector [17], ultra-thin 3D silicon detector [18], and the SINTEF 3D active edge silicon detector [19,20], Small-Pitch 3D Pixel detector [21,22]. 3D strip and pad detectors irradiated with neutrons up to a fluence of 3 × 10 17 n eq /cm 2 are characterised in 2020 [23].…”

Section: Introductionmentioning

confidence: 99%

Radiation Hardness Property of Ultra-Fast 3D-Trench Electrode Silicon Detector on N-Type Substrate

Liu

Cheng

et al. 2021

Micromachines

View full text Add to dashboard Cite

The radiation fluence of high luminosity LHC (HL-LHC) is predicted up to 1 × 1016 1 MeV neq/cm2 in the ATLAS and CMS experiments for the pixel detectors at the innermost layers. The increased radiation leads to the degradation of the detector properties, such as increased leakage current and full depletion voltage, and reduced signals and charge collection efficiency, which means it is necessary to develop the radiation hard semiconductor devices for very high luminosity colliders. In our previous study about ultra-fast 3D-trench electrode silicon detectors, through induced transient current simulation with different minimum ionizing particle (MIP) hitting positions, the ultra-fast response times ranging from 30 ps to 140 ps were verified. In this work, the full depletion voltage, breakdown voltage, leakage current, capacitance, weighting field and MIP induced transient current (signal) of the detector after radiation at different fluences will be simulated and calculated with professional software, namely the finite-element Technology Computer-Aided Design (TCAD) software frameworks. From analysis of the simulation results, one can predict the performance of the detector in heavy radiation environment. The fabrication of pixel detectors will be carried out in CMOS process platform of IMECAS based on ultra-pure high resistivity (up to 104 ohm·cm) silicon material.

show abstract

Results on proton-irradiated 3D pixel sensors interconnected to RD53A readout ASIC

Cited by 8 publications

References 10 publications

Pixelated 3D Sensors for Tracking in Radiation Harsh Environments

Pixelated 3D Sensors for Tracking in Radiation Harsh Environments

Timing Performance Simulation for 3D 4H-SiC Detector

Radiation Hardness Property of Ultra-Fast 3D-Trench Electrode Silicon Detector on N-Type Substrate

Contact Info

Product

Resources

About