2021
DOI: 10.3390/mi13010046
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Timing Performance Simulation for 3D 4H-SiC Detector

Abstract: To meet the high radiation challenge for detectors in future high-energy physics, a novel 3D 4H-SiC detector was investigated. Three-dimensional 4H-SiC detectors could potentially operate in a harsh radiation and room-temperature environment because of its high thermal conductivity and high atomic displacement threshold energy. Its 3D structure, which decouples the thickness and the distance between electrodes, further improves the timing performance and the radiation hardness of the detector. We developed a s… Show more

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Cited by 8 publications
(9 citation statements)
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“…The simulated time resolution indicates that all the leading contributions of the test system should be considered to obtain reliable results. Our study about measured and simulated time resolutions is useful to develop ultrafast 4H-SiC LGAD and 3D 4H-SiC detectors [32] which are expected to achieve improved time resolution in the near future.…”
Section: Discussionmentioning
confidence: 99%
“…The simulated time resolution indicates that all the leading contributions of the test system should be considered to obtain reliable results. Our study about measured and simulated time resolutions is useful to develop ultrafast 4H-SiC LGAD and 3D 4H-SiC detectors [32] which are expected to achieve improved time resolution in the near future.…”
Section: Discussionmentioning
confidence: 99%
“…The simulated time resolution reached around 35 ps with bias voltage of 300 V (Figure 13a) while keep constant even with temperature up to +127 • C (Figure 13b). Simulation of 5 electrodes configuration (3D-4H-SiC-5E) reveals up to 25 ps time resolution can be reached [46].…”
Section: Raser -Sic Detector Simulationmentioning
confidence: 99%
“…The tracks of electrons and the deposited energy with a step less than 1 µm were recorded. Figure from[46].…”
mentioning
confidence: 99%
“…RAdiation SEmiconductoR, RASER in short, is an Python package able to simulate major physics processes in semiconductor detectors [15], extensible and easy to customize comparing to other C++ based detector simulators such as Allpix Squared [16], Weight-field2 [17], and TRACS [18]. It has shown excellent agreement with time performance on non-irradiated pi-n diode and good prediction of 3D detectors [19,20]. The purpose for RASER simulation in this work is to reproduce the major steps of edge-TCT process, comparing results with experiment data to ensure the simulation reliable and extensive, so that predictions to other novel devices, such as silicon carbide detectors, could be made.…”
Section: Introductionmentioning
confidence: 99%