Time Resolution of the 4H-SiC PIN Detector

Abstract

We address the determination of the time resolution for the 100 μm 4H-SiC PIN detectors fabricated by Nanjing University (NJU). The time response to β particles from a 90Sr source is investigated for the detection of the minimum ionizing particles (MIPs). We study the influence of different reverse voltages, which correspond to different carrier velocities and device sizes, and how this correlates with the detector capacitance. We determine a time resolution (94 ± 1) ps for a 100 μm 4H-SiC PIN detector. A fast simulation software, termed RASER (RAdiation SEmiconductoR), is developed and validated by comparing the waveform obtained from simulated and measured data. The simulated time resolution is (73 ± 1) ps after considering the intrinsic leading contributions of the detector to time resolution.

Simulation of the 4H-SiC Low Gain Avalanche Diode

“…And also it has been developed successfully by the various foundries in the past few years [3][4][5][6][7][8][9][10][11]. However, present studies indicate the collected charges of Silicon LGAD decrease rapidly when the irradiation flux up to 2.5×10 15 n eq /cm 2 . Besides, the Silicon LGAD needs be cooling to -30 • C to offset the rapidly rising of leakage current in the extreme irradiation environment [11][12][13].…”

“…Previous measurements have indicated the 100 ps time resolution could be achieved by 100 µm 4H-SiC PIN for detection of MIPs [15]. The corresponding simulation of 3D 4H-SiC detector indicates the time resolution could reach to 25 ps and shows good stability on high temperature [16].…”

Design and simulation of 4H-SiC low gain avalanche diode

“…Our group has reported that 4H-SiC detectors have good timing performance for MIP detection. A time resolution of 𝜎 𝑇 <100 ps could be achieved in 100 μm 4H-SiC PIN for the detection of MIPs [16]. A corresponding simulation indicates the time resolution 𝜎 𝑇 of a 3D 4H-SiC detector could reach ∼25 ps and shows good stability at high temperatures [17].…”

Simulations of Silicon Radiation Detectors for High Energy Physics Experiments

“…The comparison between wave-forms obtained from measurement, RASER, and TCAD simulation shows good consistency as in Figure 11. Using the same parameters, the time resolution of measurement and simulation are (94 ± 1) ps and (73 ± 1) ps, respectively [45].…”