Results of ion implantation into silicon in the 100 MeV range. II. Electrical properties

Abstract

Oxygen and carbon ions are implanted into MOS capacitors and Schottky diodes prior to metallization. For the MOS devices dispersion in the accumulation regime is found. The Schottky diodes show linear I(U) characteristics at forward bias. In either case this is found to be the consequence of a strongly damaged buried layer and by an annealing‐induced substitutional incorporation into the silicon lattice.