Penetration of high energy ions in semiconductors through tracks: simulation with transport equations

Зайцев, А.М.; Fedotov, S. A.; Melnikov, Alexander; Komarov, F. F.; Fahrner, W. R.; Varichenko, V.S.; Kaat, E.H. Te

doi:10.1016/0168-583x(93)95991-d

Search citation statements

Order By: Relevance

Paper Sections

Select...

Track Formation Mechanisms1

Citation Types

Supporting

Mentioning

Contrasting

Year Published

1994

1997

Publication Types

Select...

Article6

Relationship

Self Cite0

Independent6

Authors

Journals

Cited by 11 publications

(1 citation statement)

References 34 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…On the basis of EPR investigations of diamonds irradiated by 63-MeV Co ions and 26.7-MeV Ne ions, the authors of ref have showed that the formation of a quasi-one-dimensional structure (tracklike) with nontetrahedral long-range atom order took place.…”

Section: Track Formation Mechanismsmentioning

confidence: 99%

Effects of Latent Tracks Formed by High-Energy Ion Implantation in Crystals

Комаров

1996

Langmuir

View full text Add to dashboard Cite

The influence of various effects inherent to the high-energy ion bombardment of crystals on the latent track formation is treated. The nature of tracks is dependent on a type of solids. The relaxation of strong electron excitation which occurs under irradiation of materials by energetic ions is the main parameter which defines the nature of track regions. The track migration of implanted atoms as well as track channeling of incident ions is discussed for ion implantation in semiconductors.

show abstract

Section: Track Formation Mechanismsmentioning

confidence: 99%