Response of electromagnetic and Thomson effect of semiconductor medium due to laser pulses and thermal memories during photothermal excitation

Lotfy, Kh.; Hаssаn, Wаfаа S.; El-Bary, Alaa A.; Kadry, Mona

doi:10.1016/j.rinp.2019.102877

Cited by 83 publications

(9 citation statements)

References 27 publications

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“…Figure 6 displays the rate change in stress component σ xz relative to the horizontal distance x. Figure 6 shows that σ xz always satisfy the surface boundary conditions for all three models (C-D, L-S and G-N) [46]. In this figure, the behaviour of wave propagation for two theories (L-S and G-N) has the same shape when they decrease at the beginning as a straight line in the first interval 0 ≤ x ≤ 0.1 then they increase in the second interval until the behaviours remain constant when the distance tends to infinity.…”

Section: Discussion and Numerical Resultsmentioning

confidence: 93%

“…The silicone (Si) and germanium (Ge) materials are chosen as a semiconductor example to make the numerical simulation (using Maple program). To obtain the main results of the basic quantity fields numerically, the physical constants of semiconducting Si medium and Ge are chosen and given as follows [43][44][45][46]: But, the physical constants of Ge material are given below [20,21]: α 0 = 0.779 × 10 −9 N, τ 0 = 0.00005s, ν 0 = 0.0005s.…”

Section: Discussion and Numerical Resultsmentioning

confidence: 99%

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Generalized photo-thermo-microstretch elastic solid semiconductor medium due to the excitation process

Raddadi

Lotfy

El-Bary

et al. 2021

Journal of Taibah University for Science

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A novel model in the photo-thermoelasticity theory with microstretch properties is studied. The plasma-elastic-thermal plane waves are propagated in a linear isotropic generalized photothermo-microstretch elastic semiconductor solid medium. The photothermal excitation occurs in the context of the microinertia of the microelement process during two-dimensional (2D) deformation. The harmonic wave techniques are used to get the solutions for the basic variables. The analytical solution of the main physical fields; carrier intensity, normal displacement components, temperature, stress load force, microstress and tangential coupled stress can be obtained. Some graphics illustrated when using the plasma, thermal and mechanical load boundary conditions are applied at the outer free surface of the elastic medium. Some semiconductor materials, as silicon (Si) and Germanium (Ge), are used to make the numerical simulation and some comparisons in different thermal memories are made. The main physical variables with new parameters are discussed theoretically and shown graphically.

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Section: Discussion and Numerical Resultsmentioning

confidence: 93%

Section: Discussion and Numerical Resultsmentioning

confidence: 99%

Generalized photo-thermo-microstretch elastic solid semiconductor medium due to the excitation process

Raddadi

Lotfy

El-Bary

et al. 2021

Journal of Taibah University for Science

Self Cite

View full text Add to dashboard Cite

show abstract

“…Lotfy et al [6] studied the electro-magnetic and Thomson effects through the photo-thermal transport process of semiconductor material. Lotfy et al [7] duscussed the responses of Thomson and electro-magnetic influnces of semi-conductor material casued by laser pulses under photo-thermoelastic excitation. Abbas et al [8] studied the analytical solution of plasma and thermo-elastic wave photogenerated by a focused laser beam in a semiconducting medium.…”

Section: Introductionmentioning

confidence: 99%

A Study of Photo-Thermoelastic Wave in Semiconductor Materials With Spherical Holes Using Analytical-numerical Methods

Alzahrani

Abbas

2021

Preprint

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Analytical and numerical solutions are two basic tools in the study of photothermal interaction problems in semiconductor medium. In this paper, we compare the analytical solutions with the numerical solutions for thermal interaction in semiconductor mediums containing spherical cavities. The governing equations are given in the domain of Laplace transforms and the eigenvalues approaches are used to obtained the analytical solution. The numerical solutions are obtained by applying the implicit finite difference method (IFDM). A comparison between the numerical solutions and analytical solution are presented. It is found that the implicit finite difference method (IFDM) is applicable, simple and efficient for such problems.

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“…Lotfy et al [10] investigated the effect of variable thermal conductivity of a semiconducting medium with cavities under the fractional-order magnetophotothermal model. Lotfy et al [11] investigated the response of Thomson and magnitic impact of semiconducor material due to laser pulses under photothermoelastic theory. Hobiny and Abbas [12] investigated the photothermal interaction in a two-dimension semi-conductor plane under the GN model.…”

Section: Introductionmentioning

confidence: 99%

The Effect of Hyperbolic Two-temperatures Model on Waves Propagation in a Semi-conductor Medium Containing Spherical Cavities

Abbas

Hobiny

2021

Preprint

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This article is interested in the study of the carrier density, the redial displacement, the conductive temperature, thermodynamic temperature and the stresses in a semi-conductor material containing a spherical hole. This investigation deals with the photo-thermo-elastic interactions in a semi-conductor medium in the context of the new hyperbolic two-temperatures model with one relaxation time. The Laplace transform technique are used to obtain the problem analytical solution by the eigenvalues methods and the inversions of the Laplace transform were performed numerically. Numerical results for semi-conductor materials are shown graphically and discussed.

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Response of electromagnetic and Thomson effect of semiconductor medium due to laser pulses and thermal memories during photothermal excitation

Cited by 83 publications

References 27 publications

Generalized photo-thermo-microstretch elastic solid semiconductor medium due to the excitation process

Generalized photo-thermo-microstretch elastic solid semiconductor medium due to the excitation process

A Study of Photo-Thermoelastic Wave in Semiconductor Materials With Spherical Holes Using Analytical-numerical Methods

The Effect of Hyperbolic Two-temperatures Model on Waves Propagation in a Semi-conductor Medium Containing Spherical Cavities

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