Resonant-Tunnelling Diodes as PUF Building Blocks

Bağcı, İbrahim Ethem; McGrath, Thomas; Barthelmes, Christine; Dean, S.J.; Gavito, Ramón Bernardo; Young, Robert J.; Roedig, Utz

doi:10.1109/tetc.2019.2893040

Cited by 5 publications

(2 citation statements)

References 33 publications

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“…The resonance voltage in the I-V characteristics depends on the QC within the nanostructure. On the other hand, the QC itself depends on the atomic-scale structure of the device and the corresponding random variability sources which consequently makes the locations of the resonance peaks unique, reliable, random, and extremely difficult to clone [109].…”

Section: Resonant Tunneling Diodes (Rtd)mentioning

confidence: 99%

Simulation and Modeling of Novel Electronic Device Architectures with NESS (Nano-Electronic Simulation Software): A Modular Nano TCAD Simulation Framework

et al. 2021

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The modeling of nano-electronic devices is a cost-effective approach for optimizing the semiconductor device performance and for guiding the fabrication technology. In this paper, we present the capabilities of the new flexible multi-scale nano TCAD simulation software called Nano-Electronic Simulation Software (NESS). NESS is designed to study the charge transport in contemporary and novel ultra-scaled semiconductor devices. In order to simulate the charge transport in such ultra-scaled devices with complex architectures and design, we have developed numerous simulation modules based on various simulation approaches. Currently, NESS contains a drift-diffusion, Kubo–Greenwood, and non-equilibrium Green’s function (NEGF) modules. All modules are numerical solvers which are implemented in the C++ programming language, and all of them are linked and solved self-consistently with the Poisson equation. Here, we have deployed some of those modules to showcase the capabilities of NESS to simulate advanced nano-scale semiconductor devices. The devices simulated in this paper are chosen to represent the current state-of-the-art and future technologies where quantum mechanical effects play an important role. Our examples include ultra-scaled nanowire transistors, tunnel transistors, resonant tunneling diodes, and negative capacitance transistors. Our results show that NESS is a robust, fast, and reliable simulation platform which can accurately predict and describe the underlying physics in novel ultra-scaled electronic devices.

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Section: Resonant Tunneling Diodes (Rtd)mentioning

confidence: 99%

Simulation and Modeling of Novel Electronic Device Architectures with NESS (Nano-Electronic Simulation Software): A Modular Nano TCAD Simulation Framework

et al. 2021

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“…PUFs can be added to an already existing integrated circuit design to generate a unique output that is determined by material parameters and the structural characteristic, which cannot be duplicated or cloned. Recently, the RTDs have been proposed as the main building blocks for quantum-confinement-based physically unclonable functions (QC-PUFs) [9,10].…”

Section: Introductionmentioning

confidence: 99%

Statistical device simulations of III-V nanowire resonant tunneling diodes as physical unclonable functions source

Rezaei

Maciazek

Sengupta

et al. 2022

Solid-State Electronics

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Analysis of the eight parameter variation of the resonant tunneling diode (RTD) in the rapid thermal annealing process with resistance compensation effect

et al. 2020

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The rapid thermal annealing process is a key technology to control the parameters of the resonant tunneling diode (RTD) and to achieve high performance for the device. In this paper, the rapid thermal annealing process on the planar RTD has been investigated experimentally. In the experiment, the annealing sample chips of different annealed times have been recorded from the annealing equipment and their I–V characteristics have been measured accordingly. From the I–V characteristics, the negative resistance and the series resistance of the RTD can be obtained. Thus, the relationship between these parameters and annealing time can be established. Finally, by analyzing the concept of the resistance compensation effect, this study explains fully and in detail the dependency of the RTD parameter variation on the annealing time. VP and Vi are significantly reduced, greatly lowering RS, which in return also reduces the heat loss of the circuit and the power consumption of the RTD digital circuits as well as the RTD terahertz oscillator. As VV decreases, negative resistance RN is increased, and thus, the output power of the RTD terahertz oscillator is increased. These results are very useful in the study of RTD devices and fabrication technology.

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Resonant-Tunnelling Diodes as PUF Building Blocks

Cited by 5 publications

References 33 publications

Simulation and Modeling of Novel Electronic Device Architectures with NESS (Nano-Electronic Simulation Software): A Modular Nano TCAD Simulation Framework

Simulation and Modeling of Novel Electronic Device Architectures with NESS (Nano-Electronic Simulation Software): A Modular Nano TCAD Simulation Framework

Statistical device simulations of III-V nanowire resonant tunneling diodes as physical unclonable functions source

Analysis of the eight parameter variation of the resonant tunneling diode (RTD) in the rapid thermal annealing process with resistance compensation effect

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