Resonant tunneling through a Si/GexSi1−x/Si heterostructure on a GeSi buffer layer

Abstract

Resonant tunneling of holes through an unstrained GeSi well between two strained Si barriers on a relaxed GeSi buffer layer has been observed for the first time. The peak-to-valley ratios of 2.1/1 at 4.2 K and 1.6/1 at 77 K in current-voltage characteristics were attained for light holes. Resonant tunneling from heavy-hole states was also observed at room temperature, as well as 77 and 4.2 K by conductance measurement. The positions of the resonance peaks are in good agreement with the light- and heavy-hole bound states in the quantum well.

Fabrication of Hole Resonant Tunneling Diodes with Nanometer Order Heterostructures of Si/Strained Si1-xGex Epitaxially Grown on Si(100)

“…By utilizing electronic band discontinuity in Si/Si 1-x Ge x heterostructures epitaxially grown on Si substrates, p-type and n-type RTDs have been fabricated and are being studied extensively towards RTD operation in the Si LSI at near room temperature (4)(5)(6)(7)(8)(9)(10). Although the RTD characteristics is sensitive to dimensions and quality of the heterostructure, recent advanced epitaxial growth technology of Sibased group IV semiconductors (11) will enable to form high-quality nanometer-order heterostructures for improved RTD characteristics.…”

Si resonant interband tunnel diodes grown by low-temperature molecular-beam epitaxy

“…These roomtemperature values are significantly larger than reported PVCR values for epitaxial Si tunnel diodes at any temperature. [5][6][7][8][9][10][11][12][13][14]17 It is observed that V p shifted to larger values with higher anneal temperature. The plot of V p vs I p was linear.…”

Room-Temperature Resonant Tunneling Diode with High-Ge-Fraction Strained Si1-xGex and Nanometer-Order Ultrathin Si

“…After the substrates were heated in H 2 at 60 Pa up to 750 o C in order to obtain a clean surface, the samples were cooled down to 400 o C. Then, Si 0.42 Ge 0.58 epitaxial growth was performed in a SiH 4 -GeH 4 -H 2 gas mixture: Total pressure was 30 Pa and partial pressures of SiH 4 and GeH 4 were 6.0 Pa and 2.3 Pa, respectively. Especially to suppress the roughness generation at heterointerfaces for higher Ge fraction, Si barriers were deposited using Si 2 H 6 reaction at a lower temperature of 400 o C instead of SiH 4 reaction at 500 o C after the Si 0.42 Ge 0.58 growth: Total pressure was 30 Pa and Si 2 H 6 partial pressure of 20 Pa.…”

“…Room-temperature resonant tunneling diode (RTD) of group IV semiconductor heterostructure has a great potential as such a quantum effect devices. By utilizing electronic band discontinuity in Si/Si 1-x Ge x heterostructures epitaxially grown on Si substrates, p-type and n-type RTDs have been fabricated and are being studied extensively towards RTD operation in the Si LSI at near room temperature (3)(4)(5)(6)(7)(8)(9).…”