Fabrication of Hole Resonant Tunneling Diodes with Nanometer Order Heterostructures of Si/Strained Si_1-xGe_x Epitaxially Grown on Si(100)

Abstract

Hole resonant tunneling diodes with Si/strained Si1-xGex heterostructures epitaxially grown on Si(100) were fabricated and improvement of the negative differential conductance characteristics was explored by reducing thickness of Si barriers and Si1-xGex quantum well into a few nanometer order. It was clearly shown that, by reducing the Si barrier thickness down to 2 nm, high peak current density above a few kA/cm2 can be obtained under a peak-to-valley ratio of about 2 at 11 K. From the temperature dependence of the peak and valley currents, it is suggested that local introduction of higher Ge fraction effectively suppresses increase of valley current at higher temperatures.

Atomically Controlled Plasma Processing for Group IV Quantum Heterostructure Formation

“…Epitaxial growth of nanometer-order multilayer heterostructures with atomically controlled interfaces on Si is necessary to create quantum-effect devices with group IV semiconductors [1][2][3]. Additionally, atomic-layer doping in group IV semiconductors [4] is expected to enable introduction of 2-dimensional (2-D) lattice strain as well as carriers for electronic property modulation in group IV semiconductors.…”