Resonant tunneling device with multiple negative differential resistance: Digital and signal processing applications with reduced circuit complexity

Sen, Samita; Capasso, Federico; Cho, A.Y.; Sivco, Deborah L.

doi:10.1109/t-ed.1987.23215

Cited by 146 publications

(39 citation statements)

References 14 publications

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“…4. Since the peak currents depends on both the junction width and gate voltage, they were given by (1) where and are peak current and width of junction , is a bias voltage applied to the gate G2, is a peak current density per unit width at the gate voltage of 0 V, and is a transconductance. From Fig.…”

Section: A Three-valued D-ffmentioning

confidence: 99%

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A three-valued D-flip-flop and shift register using multiple-junction surface tunnel transistors

Uemura

Baba

2002

IEEE Trans. Electron Devices

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Section: A Three-valued D-ffmentioning

confidence: 99%

“…Many MVL circuits using the resonant tunneling diode (RTD), which is the most mature NDR device, or resonant tunneling transistors including the combination of RTD and FET have been reported [1]- [3].…”

Section: Introductionmentioning

confidence: 99%

A three-valued D-flip-flop and shift register using multiple-junction surface tunnel transistors

Uemura

Baba

2002

IEEE Trans. Electron Devices

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“…The negative differential resistance (NDR) devices have attracted a great deal of interest in many analog and digital circuits owing to their unique folded current-voltage (I-V) characteristic [1], [2]. In particular, the multiple-peak NDR circuits provide the convenience to implement the multiplevalued logic (MVL) circuit [3]- [5].…”

Section: Introductionmentioning

confidence: 99%

Novel Multiple-Valued Logic Design Using BiCMOS-Based Negative Differential Resistance Circuit Biased by Two Current Sources

Gan

Liang

Chen

2010

IEICE Trans. Inf. & Syst.

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SUMMARYThe paper demonstrates a novel multiple-valued logic (MVL) design using a three-peak negative differential resistance (NDR) circuit, which is made of several Si-based metal-oxide-semiconductor fieldeffect-transistor (MOS) and SiGe-based heterojunction bipolar transistor (HBT) devices. Specifically, this three-peak NDR circuit is biased by two switch-controlled current sources. Compared to the traditional MVL circuit made of resonant tunneling diode (RTD), this multiple-peak MOS-HBT-NDR circuit has two major advantages. One is that the fabrication of this circuit can be fully implemented by the standard BiCMOS process without the need for molecular-beam epitaxy system. Another is that we can obtain more logic states than the RTD-based MVL design. In measuring, we can obtain eight logic states at the output according to a sequent control of two current sources on and off in order.

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“…Recently, the negative differential resistance (NDR) devices had been applied to many analog and digital circuits including logic circuit, memory circuit, frequency multiplier and divider, multiplexer and demultiplexer, delta sigma modulator, voltage-controlled oscillator, flip-flop circuit, and differential comparator [1][2][3][4][5][6][7][8][9][10][11][12][13][14]. Most of the NDR-based applications are utilized the resonant tunneling diode (RTD) as the basic device.…”

Section: Introductionmentioning

confidence: 99%

Design and characterization of the negative differential resistance circuits using the CMOS and BiCMOS process

Gan

Tsai

Liang

2009

Analog Integr Circ Sig Process

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We investigate four novel negative-differentialresistance (NDR) circuits using the combination of the standard Si-based n-channel metal-oxide-semiconductor field-effect-transistor (NMOS) and SiGe-based heterojunction bipolar transistor (HBT). By suitably designing the parameters, we can obtain the K-or N-type currentvoltage (I-V) curve. Especially, the peak current of the combined I-V curve could be easy adjusted by the external voltage. In application, we utilize the NDR circuit to design an inverter circuit based on the monostable-bistable transition logic element. The fabrication of these NDR circuits and applications could be completely implemented by the simple and standard Si-based CMOS or SiGe-based BiC-MOS process without using the complex and expensive process such as metalorganic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE).

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Resonant tunneling device with multiple negative differential resistance: Digital and signal processing applications with reduced circuit complexity

Cited by 146 publications

References 14 publications

A three-valued D-flip-flop and shift register using multiple-junction surface tunnel transistors

A three-valued D-flip-flop and shift register using multiple-junction surface tunnel transistors

Novel Multiple-Valued Logic Design Using BiCMOS-Based Negative Differential Resistance Circuit Biased by Two Current Sources

Design and characterization of the negative differential resistance circuits using the CMOS and BiCMOS process

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