Design and characterization of the negative differential resistance circuits using the CMOS and BiCMOS process

Gan, Kwang–Jow; Tsai, Cher-Shiung; Liang, Dong-Shong

doi:10.1007/s10470-009-9327-5

Cited by 17 publications

(9 citation statements)

References 17 publications

(15 reference statements)

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“…III‐nitrides have also proven applications in tunnel diodes to achieve better negative differential resistance (NDR) effect and high peak to valley current ratio (PVCR) . The NDR effect has found wide applications in rectifiers, oscillator, frequency multiplier, memory, and fast switching devices . Among all III‐nitrides, outshining bulk gallium nitride (GaN) is a very promising material in various high voltage and RF applications .…”

Section: Introductionmentioning

confidence: 99%

Realizing Negative Differential Resistance/Switching Phenomena in Zigzag GaN Nanoribbons by Edge Fluorination: A DFT Investigation

Inge

Jaiswal

Kondekar

2017

Adv Materials Inter

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applications. [10][11][12][13] However, on the other hand, the intrinsic wide bandgap of GaN is a major obstacle in its path for low power electronic devices. To counter this problem, researchers have studied bandgap engineering of 2D GaN via functionalizing its edges with different elements/functional groups as well as suitable dopants. [14][15][16][17][18] Owing to state of the art experimental evolution, nowadays it is possible to synthesize and characterize monolayer of various materials including III-V compound semiconductors. [19][20][21] Recently, Balushi et al., [22] have successfully synthesized graphene encapsulated few layer GaN nanosheet on the SiC substrate. Bhattacharya et al., [23] also synthesized 0.6 nm thick 2D GaN in Na-4 mica channels. In another report, GaN nanosheets were found to sustain at fields as high as 5.8 V nm −1 and 4 V nm −1 for AA'A and ABA stacking respectively which is significantly greater than the breakdown field (0.3-0.5 V nm −1 ) of bulk GaN. [24] Thus it can be concluded that a monolayer of GaN can be used for wider applications in the ambient conditions. However, its wide bandgap still remains a remarkable hurdle for realization of various electronic devices. Recently, halogen functionalization (edge passivation) has been adopted to tailor the electronic properties of zigzag edged graphene nanoribbon. [25] It also results in enhancing the stability of nanoribbons which present them as preferred candidate over edge functionalized ZGNR via H atoms. [25] Motivated from this, in the present work, we studied, the structural and electronic properties of zigzag edged GaN nanoribbons (ZGaNNRs) to reveal its potential applications in the upcoming nanodevices considering various possible combinations of F functionalization. The selection of F atom was expected to result in large charge transfer due to its higher electronegativity and therefore enhancing stability.We have studied the electronic properties of different configurations of ZGaNNRs for different widths (N z = 4-8 dimers). The energy states at the edges of ZGaNNRs significantly alter the band structure and electronic properties of the nanoribbon as compared to energy states in central region. The structural stability for each considered configuration is studied and compared. The NDR effect in 2D material-based devices is observed because of the variation in transmission coefficient and difference of the Fermi functions affected by density of states (DOS).Gallium nitride (GaN) is a commonly used material for the high power electronic devices. Its 2D analog (layered GaN) can be a promising material in low power applications due to its flexible bandgap. This study investigates the structural stability, electronic and transport properties of zigzag edged GaN nanoribbons (ZGaNNRs), considering various edge passivations to gauge its potential for beyond silicon electronic devices. Present density functional theory based calculations reveal that metallic/semiconducting nature can be obtained in ZGaNNRs via controlled edge fluorin...

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Section: Introductionmentioning

confidence: 99%

Realizing Negative Differential Resistance/Switching Phenomena in Zigzag GaN Nanoribbons by Edge Fluorination: A DFT Investigation

Inge

Jaiswal

Kondekar

2017

Adv Materials Inter

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“…The physical origin of NDR in biomolecules is still in debate and many mechanisms were proposed to explain this effect, such as polaron formation, resonance tunneling, conformational changes in the measured molecule, and the presence of molecular redox states [98]. NDR has attracted great interest in the last years, since it includes the existence of bistable states with an on/off ratio, on which many applications can be based, for instance memories, voltage--controlled oscillator, flip--flop and logic circuits [99]. Recently, Mentovich et al [98] verified direct correlation between NDR and redox centers, by comparing transistor effect in case of azurin or apo--azurin deprived from its redox center.…”

Section: Proteins For Bioelectronicsmentioning

confidence: 99%

Nanogaps and biomolecules

Motto¹,

Rattalino²,

Sanginario³

et al. 2015

Handbook of Bioelectronics

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Nanogaps and BioMolecules. Molecular electronic transport characterization is an active part of the research field in nanotechnology. The main underlying idea is to use single molecules as active elements in nano-devices [1]. As a consequence, the proper fabrication of a molecule-electrode contact is a crucial issue [2],[3] and several applications can be thus envisioned. For example, in biosensing it is fundamental the electrochemical detection of different crucial biomarkers upon the investigation and variation of the electric conduction of the metal-molecule-metal junction. Possible applications involve the biomedical diagnostics and the monitoring of biological systems. In particular, the detection of single protein might become the starting point for monitoring drugs, developing clean energy systems, fabricating bio-opto-electronic transistors, and other innovative devices and systems. The Fabrication of Nanogaps. NanoGap Electrodes (defined as a pair of electrodes separated by a nanometer-sized gap, NGEs) are fundamental tools for characterizing the electric properties of material at the nanometer scale, even at the molecular scale. They are also important building blocks for the fabrication of nanometer-sized devices and circuits. Molecular-based devices possess unique advantages for electronic applications with respect to conventional components [4], such as lower cost, lower power dissipation and higher efficiency. Specific molecules can be not only recognized, but also self-assembled on such NGEs, thus leading to elaborated geometries for the study of distinct optical and electronic properties. A variety of specific electronic functions performed by single molecules, including rectifiers [5],[6], switches [7],[8] and transistors [9]-[12], have been designed and studied. Devices based on NGEs [13]-[16], with functional molecules inserted in the desired positions, have great potential as building blocks for super-integrated circuits, and thus can be more likely used in practical applications. Moreover, since the NGEs are fabricated before the molecular component insertion, the junction can be characterized with and without molecules in place, thus facilitating the distinction of the intrinsic molecule properties. As most of the NGEs present a planar configuration, it would be easier to take the underlying substrate as a gate contact to tune the electrical properties of the molecular components. Furthermore, these structures do not require feedback to maintain the mutual arrangement (comparing with conducting tips' Atomic Force Microscope) and are less stochastic with respect to electrochemical cells. Typical dimensions of target molecules are well below 5 nm, and the fabrication of gaps around this dimension is very challenging, since it goes beyond the capability of traditional microfabrication technologies. In addition, if the gap is too small, molecules can be deposited in a tense and distorted state, resulting in unexpected performances. Several effective and creative methods of fabricating NGEs with ...

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“…The BJT uses the standard npn2 cell based on the CMOS process provided by the TSMC foundry. The operation of this NDR circuit had been discussed [5]. The Vgg value must be large enough to turn on both the MN1 and BJT devices.…”

Section: Ndr Circuit and Mobile Operationmentioning

confidence: 99%

“…Recently, our research group demonstrated a novel NDR circuit composed of the Si-based metal-oxide-semiconductor field effect transistors (MOS) and bipolar junction transistors (BJT), which was named as the MOS-BJT-NDR [5]. The great advantage of this NDR circuit is that we can fabricate their applications using the standard CMOS process.…”

Section: Introductionmentioning

confidence: 99%

Logic Circuit Design Based on Series-Connected CMOS-NDR Circuit

Gan¹,

Kao²,

Tsai³

et al. 2013

IJCTE

Self Cite

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Abstract-In this paper, we propose a MOS-BJT-NDR circuit, which can show the negative-differential-resistance (NDR) characteristic in its current-voltage (I-V) curve. This NDR circuit is composed of standard Si-based metal-oxide-semiconductor field-effect transistor (MOS) and bipolar junction transistor (BJT). Therefore, we can implement the applications using the standard CMOS process. We demonstrate the design of some logic circuits using the series-connected CMOS-NDR circuit based on the monostable-bistable transition logic element (MOBILE) theory. This logic circuit is designed based on the standard 0.18 μm CMOS process. IndexTerms-CMOS process, logic circuit, monostable-bistable transition logic element (MOBILE), negative-differential-resistance.

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Design and characterization of the negative differential resistance circuits using the CMOS and BiCMOS process

Cited by 17 publications

References 17 publications

Realizing Negative Differential Resistance/Switching Phenomena in Zigzag GaN Nanoribbons by Edge Fluorination: A DFT Investigation

Realizing Negative Differential Resistance/Switching Phenomena in Zigzag GaN Nanoribbons by Edge Fluorination: A DFT Investigation

Nanogaps and biomolecules

Logic Circuit Design Based on Series-Connected CMOS-NDR Circuit

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