Abstract-In this paper, we propose a MOS-BJT-NDR circuit, which can show the negative-differential-resistance (NDR) characteristic in its current-voltage (I-V) curve. This NDR circuit is composed of standard Si-based metal-oxide-semiconductor field-effect transistor (MOS) and bipolar junction transistor (BJT). Therefore, we can implement the applications using the standard CMOS process. We demonstrate the design of some logic circuits using the series-connected CMOS-NDR circuit based on the monostable-bistable transition logic element (MOBILE) theory. This logic circuit is designed based on the standard 0.18 μm CMOS process.
IndexTerms-CMOS process, logic circuit, monostable-bistable transition logic element (MOBILE), negative-differential-resistance.
We present a Van Der Pol (VDP) oscillator which is composed of a negative-differential-resistance (NDR) circuit, an inductor, and a capacitor. The core NDR circuit is consisted of five Si-based metal-oxide-semiconductor fieldeffect transistor (MOS) devices and one SiGe-based heterojunction bipolar transistor (HBT) device. When an external periodic signal is inputted in such circuit, it outputs various kinds of signal waveforms including the chaos signals and bifurcation sequences. A dynamic frequency divider circuit using the long-period behavior of the NDRbased chaos circuit is demonstrated. This circuit is designed using a standard 0.18 μm BiCMOS technique.
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