Resonant level lifetime in GaAs/AlGaAs double-barrier structures

Bahder, Thomas B.; Morrison, Clyde A.; Bruno, John D.

doi:10.1063/1.98749

Cited by 70 publications

(21 citation statements)

References 10 publications

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“…1. For the RTD structure under consideration, we estimate the value of L to be 0.06 ps, 14 which is in approximate agreement with the independent tunneling calculations of Bahder et al 28 Repeating the numerical circuit simulations with the L(V) defined in Eq. ͑12͒ yielded the forward-sweep I -V characteristic shown in Fig.…”

Section: B Self-oscillation Studysupporting

confidence: 78%

On the different physical roles of hysteresis and intrinsic oscillations in resonant tunneling structures

Woolard

Buot

Rhodes

et al. 1996

Journal of Applied Physics

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Articles you may be interested inTuning of terahertz intrinsic oscillations in asymmetric triple-barrier resonant tunneling diodes Electronic sources based upon resonant tunneling diodes ͑RTDs͒ usually generate power by establishing limit cycles which exchange energy with storage elements in an external biasing circuit; hence, the output power in this type of implementation will always be limited by extrinsic effects. We verify the presence of multiple energy-storage mechanisms solely within the RTD and characterizes the interdependencies necessary to induce intrinsic oscillations observed in quantum mechanical simulations. Specifically, we show that a nonlinear ''access'' resistance and quantum-well inductance is responsible for the hysteresis, ''plateaulike'' behavior, and bistability associated with the intrinsic current-voltage (I -V) characteristic. Furthermore, a new circuit-level representation which accurately incorporates the nonlinear dependencies into these heretofore ''linear'' equivalent-circuit elements is used to demonstrate the different roles, as well as the degree of cooperative interplay, of the intrinsic oscillations and hysteresis in determining the overall I -V characteristics of the RTD.

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Section: B Self-oscillation Studysupporting

confidence: 78%

On the different physical roles of hysteresis and intrinsic oscillations in resonant tunneling structures

Woolard

Buot

Rhodes

et al. 1996

Journal of Applied Physics

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“…It is found that there are two confined states w 0 and w 1 for samples A and B, and only one confined state w 0 for samples C, D, E, F, G. The results are consistent with other theoretic consideration, e.g. the complex eigen-value approach [13][14][15][16]. Since the second confined states in samples A and B are close to the barrier potential, under external bias, carriers in those states can escape easily and result in current.…”

Section: Electronic States Of Qwipsupporting

confidence: 81%

Detection wavelengths and photocurrents of very long wavelength quantum-well infrared photodetectors

Guo

Zhen

et al. 2005

Infrared Physics & Technology

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“…This phenomenon is known as the Fano resonance, 6 which is well described by the pole configuration of the transmission amplitude in the complex energy plane. 7,8 The imaginary part of the pole is a measure of the width of the resonance ͑antiresonance͒, while the real part indicates the position of the resonance ͑antiresonance͒ in the energy coordinate.…”

mentioning

confidence: 99%

Giant persistent currents in the open Aharonov-Bohm rings

Wei

Hong

et al. 2001

Phys. Rev. B

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We investigate persistent currents in the Aharonov-Bohm rings coupled to external leads. For a contacted double-ring structure, it is found that the flux-independent perfect transmission occurs at klϭ/2, where k is the wave number and l the half length of a single ring. The flux-independent perfect reflection occurs at kl ϭ0. These repeat with period in kl. There are singular points in the flux at f ϭ1/2 for the flux-independent perfect transmission where f means the ratio of a flux to the flux quantum and at f ϭ0 for the reflection. These repeat with period 1 in f. A giant persistent current is generated whenever kl approaches these singular points.

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Resonant level lifetime in GaAs/AlGaAs double-barrier structures

Abstract: The lifetime of the lowest quasibound state localized between the barriers of a GaAs/AlGaAs double-barrier structure is calculated as a function of barrier and well dimensions. The results are consistent with high-frequency experiments.

Cited by 70 publications

References 10 publications

On the different physical roles of hysteresis and intrinsic oscillations in resonant tunneling structures

On the different physical roles of hysteresis and intrinsic oscillations in resonant tunneling structures

Detection wavelengths and photocurrents of very long wavelength quantum-well infrared photodetectors

Giant persistent currents in the open Aharonov-Bohm rings

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