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Articles you may be interested inTuning of terahertz intrinsic oscillations in asymmetric triple-barrier resonant tunneling diodes Electronic sources based upon resonant tunneling diodes ͑RTDs͒ usually generate power by establishing limit cycles which exchange energy with storage elements in an external biasing circuit; hence, the output power in this type of implementation will always be limited by extrinsic effects. We verify the presence of multiple energy-storage mechanisms solely within the RTD and characterizes the interdependencies necessary to induce intrinsic oscillations observed in quantum mechanical simulations. Specifically, we show that a nonlinear ''access'' resistance and quantum-well inductance is responsible for the hysteresis, ''plateaulike'' behavior, and bistability associated with the intrinsic current-voltage (I -V) characteristic. Furthermore, a new circuit-level representation which accurately incorporates the nonlinear dependencies into these heretofore ''linear'' equivalent-circuit elements is used to demonstrate the different roles, as well as the degree of cooperative interplay, of the intrinsic oscillations and hysteresis in determining the overall I -V characteristics of the RTD.