Detection wavelengths and photocurrents of very long wavelength quantum-well infrared photodetectors

Li, Ning; Guo, Fang; Zhen, Honglou; Jiang, Jun; Lü, Wei; Fu, Ying

doi:10.1016/j.infrared.2005.02.008

Cited by 9 publications

(5 citation statements)

References 18 publications

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“…In recent years, both singlestage in-line and coaxial STPs working below 40 K have achieved some new progresses in both no-load temperature and cooling ability in the world [53,85,97,98]. The GaAs/AlGaAs QWIPs with longer than 15 lm wavelength were available in the author's laboratory about 10 years ago [99]. To meet their cooling requirements, a standard 35-45 K single-stage SPTC has been developed in NLIP/SITP/CAS.…”

Section: Compressors For 35-45 K Single-stage Sptcsmentioning

confidence: 99%

Development of high performance moving-coil linear compressors for space Stirling-type pulse tube cryocoolers

Dang

2015

Cryogenics

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Section: Compressors For 35-45 K Single-stage Sptcsmentioning

confidence: 99%

Development of high performance moving-coil linear compressors for space Stirling-type pulse tube cryocoolers

Dang

2015

Cryogenics

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“…A variety of strategies have been devised to solve the problem including a 45° bevel design and an optical diffraction grating [7][8][9][10] . They all diffract the normal incident radiation into transverse modes with a nonzero electric field component perpendicular to the quantum well growth direction, and result in more IR light which can be coupled to the QWIP detector structure.…”

Section: Qwip Array Processingmentioning

confidence: 99%

The theory and experiment of very-long-wavelength 256×1 GaAs/Al x Ga1−x As quantum well infrared detector linear arrays

Guo

Xiong

et al. 2008

Sci. China Ser. G-Phys. Mech. Astron.

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The 256×1 linear array of multiple quantum wells infrared photodetector (QWIP) is designed and fabricated for the peak response wavelength at λ P = 14.6 μm. The response spectral width is bigger than 2.2 μm. The two-dimensional (2D) diffractive coupling grating has been formed on the top QWIP photosensitive pixel for coupling the infrared radiation to the infrared detective layers. The performance of the device at V B = 3 V and T = 45 K has the responsibility 4.28×10 −2 (A/W), the blackbody detectivity D b * = 5.14×10 9 (cm·Hz 1/2 /W), and the peak detectivity D λ * = 4.24× 10 10 (cm⋅Hz 1/2 /W). The sensor pixels are connected with CMOS read out circuit (ROC) hybridization by indium bumps. When integral time is 100 μs, the linear array has the effective pixel of QWIP FPA N ef of 99.2%, the average responsibility R (V/W) of 3.48×10 6 (V/W), the average peak detectivity D λ * of 8.29×10 9 (cm·Hz 1/2 /W), and the non-uniformity U R of 5.83%. This device is ready for the thermal image application. quantum well, focal plane arrays, very long wavelength, infrared detector, diffraction gratingThe IR imaging systems that operate in the very long wavelength IR (VWIR) region are required in the space detection applications due to their correlation with the CO 2 absorption band. The square quantum wells are designed in such a way that the energy separation between the first excited state and ground state matches the energy of the infrared photons to be detected, which can cover the response wavelength from 3 to 18 µm for quantum well infrared photoconductor (QWIP). Both HgCdTe photodiodes and QWIPs have demonstrated the capability in the LWIR range. The performance figures of merit of state-of-the-art for QWIP and HgCdTe FPAs are similar because the main limitations come from the readout circuits. However, the HgCdTe process yield is low for

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“…But lower quantum efficiency and higher dark current, lower temperature operating and electron lifetime are inadequate in QW while the single quantum dot QD has lower density and absorption efficiency. Therefore, the quantum QW and QD is taken into combine for mutually reinforcing [1][2][3][4][5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

The photoelectric conversion behavior of GaAs/InGaAs/InAs quantum dots-in-well in double barrier

Wang

Ding

Guo

2014

Numerical Simulation of Optoelectronic Devices, 2014

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A GaAs/InGaAs/InAs quantum dots -quantum well in double barrier is discussed in this paper, because it has shown a specific inner multiplication in test and lower dark current accompanied by high current gains. The S (signal)/D (dark current) has reached 10 6 at a certain light power and bias. For further know its electronic transport and photoelectric characteristic, we are contrastive analysis sensitivity and dark current of quantum dots and quantum well in double barrier respectively, and interrelation under different illumination intensity respectively.

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Detection wavelengths and photocurrents of very long wavelength quantum-well infrared photodetectors

Cited by 9 publications

References 18 publications

Development of high performance moving-coil linear compressors for space Stirling-type pulse tube cryocoolers

Development of high performance moving-coil linear compressors for space Stirling-type pulse tube cryocoolers

The theory and experiment of very-long-wavelength 256×1 GaAs/Al x Ga1−x As quantum well infrared detector linear arrays

The photoelectric conversion behavior of GaAs/InGaAs/InAs quantum dots-in-well in double barrier

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