Resistive switching behaviour in ZnO and VO
            <sub>2</sub>
            memristors grown by pulsed laser deposition

Macaluso, Roberto; Mosca, Mauro; Costanza, Vincenzo; D’Angelo, Alessandra; Lullo, G.; Caruso, Fulvio; Calı̀, C.; Franco, Francesco Di; Santamaria, Monica; Quarto, F. Di

doi:10.1049/el.2013.3175

Cited by 38 publications

(20 citation statements)

References 7 publications

(14 reference statements)

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“…In the work presented herein, we obtained the full Cu 2 O/AZO/ZnO stack structure after a unique three-step pulsed laser deposition (PLD) process, [24][25][26][27][28][29] making the fabrication process simpler and decreasing the damage compared with other literature reports 18-23 and further improving the quality of the heterojunction in terms of the interface, surface roughness, passivation, and leakage currents. Study of the morphological, structural, optical, and electrical properties of the deposited Cu 2 O/AZO and Cu 2 O/ZnO/AZO heterojunctions revealed that the p-Cu 2 O/n-ZnO/n-AZO heterojunctions exhibited well-defined rectifying behavior and could thus be useful for future high-performance heterostructure photovoltaic devices.…”

Section: U N C O R R E C T E D P R O O Fmentioning

confidence: 99%

Improved Cu2O/AZO Heterojunction by Inserting a Thin ZnO Interlayer Grown by Pulsed Laser Deposition

Boughelout

Macaluso

Crupi

et al. 2019

Journal of Elec Materi

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Section: U N C O R R E C T E D P R O O Fmentioning

confidence: 99%

Improved Cu2O/AZO Heterojunction by Inserting a Thin ZnO Interlayer Grown by Pulsed Laser Deposition

Boughelout

Macaluso

Crupi

et al. 2019

Journal of Elec Materi

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“…[1] The major disadvantage of 3D crossbars currently is the high-leakage or sneak-path current. [3] Depending on the stoichiometry, crystal structure, and device structure it has demonstrated bipolar resistive switching (BRS) [4][5][6][7][8][9][10] as well as apolar threshold switching (TS). [3] Depending on the stoichiometry, crystal structure, and device structure it has demonstrated bipolar resistive switching (BRS) [4][5][6][7][8][9][10] as well as apolar threshold switching (TS).…”

mentioning

confidence: 99%

In Situ Nanostructural Analysis of Volatile Threshold Switching and Non‐Volatile Bipolar Resistive Switching in Mixed‐Phased a‐VO_x Asymmetric Crossbars

Nirantar

Mayes

Rahman

et al. 2019

Adv Elect Materials

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structure due to its ability to be designed in high capacity 3D crossbar arrays. [1] The major disadvantage of 3D crossbars currently is the high-leakage or sneak-path current. [2] Complex class of vanadium oxide spans a broad range of 20 phases. [3] Depending on the stoichiometry, crystal structure, and device structure it has demonstrated bipolar resistive switching (BRS) [4][5][6][7][8][9][10] as well as apolar threshold switching (TS). [11][12][13] Apolar TS property in the above papers is desirable as a selector element in crossbar arrays to reduce the sneak-path current (which disrupts stored data). Crystalline VO 2 (c-VO 2 ) as TS element shows significant OFF-current, [12,13] which defeats its primary purpose as a selector. For this reason, a few recent studies [10,[14][15][16] demonstrated TS based on amorphous vanadium oxide (a-VO x ). However, due to the amorphous nature of the film, devices based on same stoichiometry of vanadium oxide show multifunctional memory behavior, [17] which is not desirable for the practical application. This variability highlights that nanostructural investigations are needed to understand the origins of different memory behaviors, in particular the reasons for observing volatile and apolar TS in a-VO x films for its practical utilization as a selector element. Further, in-depth electrical characterization is required to ascertain the electrical conditions for the occurrence of volatile or non-volatile switching in the single device.Here, we present asymmetric cross-point device (Pt/Ti/a-VO x /Pt) with ≈100 nm a-VO x film as a functional switching layer which shows multifunctional behavior in a single device. We further introduce a fabrication procedure (Section S1, Supporting Information) to incorporate a-VO x in crossbar architecture, which has been found to dissolve in water. We choose amorphous films because crystalline films are porous due to grain boundaries and pin-holes, [11] which is unsuitable for stacked architectures. Through X-ray photoelectron spectroscopy (XPS) we analyze the stoichiometry of as-deposited film which revealed the mixed-phased oxidation, including V 3+ , V 4+ , and V 5+ (corresponding to V 2 O 3 , VO 2 , and V 2 O 5 , respectively).

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“…10 In contrast, VO x thin films have also been reported recently for resistive switching performance by several groups. [11][12][13][14] However, application of VO x 2D nanosheets in resistive switching memory devices is not yet reported. Hence, it is important to study the resistive switching property of this important 2D oxide in details.…”

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Electroforming free resistive switching memory in two-dimensional VOx nanosheets

Hota

Nagaraju

Hedhili

et al. 2015

Applied Physics Letters

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We report two-dimensional VOx nanosheets containing multi-oxidation states (V5+, V4+, and V3+), prepared by a hydrothermal process for potential applications in resistive switching devices. The experimental results demonstrate a highly reproducible, electroforming-free, low SET bias bipolar resistive switching memory performance with endurance for more than 100 cycles maintaining OFF/ON ratio of ∼60 times. These devices show better memory performance as compared to previously reported VOx thin film based devices. The memory mechanism in VOx is proposed to be originated from the migration of oxygen vacancies/ions, an influence of the bottom electrode and existence of multi-oxidation states.

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Resistive switching behaviour in ZnO and VO ₂ memristors grown by pulsed laser deposition

Cited by 38 publications

References 7 publications

Improved Cu2O/AZO Heterojunction by Inserting a Thin ZnO Interlayer Grown by Pulsed Laser Deposition

Improved Cu2O/AZO Heterojunction by Inserting a Thin ZnO Interlayer Grown by Pulsed Laser Deposition

In Situ Nanostructural Analysis of Volatile Threshold Switching and Non‐Volatile Bipolar Resistive Switching in Mixed‐Phased a‐VO_x Asymmetric Crossbars

Electroforming free resistive switching memory in two-dimensional VOx nanosheets

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Resistive switching behaviour in ZnO and VO 2 memristors grown by pulsed laser deposition

Cited by 38 publications

References 7 publications

Improved Cu2O/AZO Heterojunction by Inserting a Thin ZnO Interlayer Grown by Pulsed Laser Deposition

Improved Cu2O/AZO Heterojunction by Inserting a Thin ZnO Interlayer Grown by Pulsed Laser Deposition

In Situ Nanostructural Analysis of Volatile Threshold Switching and Non‐Volatile Bipolar Resistive Switching in Mixed‐Phased a‐VOx Asymmetric Crossbars

Electroforming free resistive switching memory in two-dimensional VOx nanosheets

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Product

Resources

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Resistive switching behaviour in ZnO and VO ₂ memristors grown by pulsed laser deposition

In Situ Nanostructural Analysis of Volatile Threshold Switching and Non‐Volatile Bipolar Resistive Switching in Mixed‐Phased a‐VO_x Asymmetric Crossbars