Resistive switching behavior in memristors with TiO2 nanorod arrays of different dimensions

Abstract

(Chao Jiang) associated with the oxygen vacancies explains the current-voltage behavior of these devices in this three layer structure. A schematic model is presented to illustrate the changes in oxygen vacancy concentration and switching processes, including the formation of new oxygen vacancies (triggered vacancies) to explain the large increase in current at the end of the setting process in these devices.

Origin of resistive-switching behaviors of chemical solution deposition-derived BiFeO3 thin-film memristors

“…In the high-frequency J-V curve of Fig. 1c, a negative differential resistance (NDR), 38 which is well known in TiO 2 -based memristors, 39 was also observed in the range from À4.2 V to À5.4 V. In TiO 2 , the NDR is related to the migration of charged ions. 38 However, the two current peaks at 6.1 V and À4.2 V only existed under high frequency, and disappeared for low frequency signal.…”

Effect of Fatigue Fracture on Resistive Switching of ZnO and NiO Stacking Films

“…[ 31 ] In regard to the bent samples, Figure 6b shows that the crack formation leads to more traps and a higher interfacial barrier, which decreases the carrier mobility and increases the depletion layer width at the interface. [ 32 ] Moreover, the thermal effect caused by bending accelerates the oxidation of the film, resulting in the decrease of oxygen vacancy density. With the increase of bending times, the probability of carrier captured by traps is further enhanced due to more defects, and microcracks cause branch breakage of the filaments.…”

Wrinkled‐Surface‐Induced Memristive Behavior of MoS2 Wrapped GaN Nanowires

“…The I-V curves are fitted with the trapcontrolled space charge limited current (SCLC) model. [13,[27][28][29] The SCLC model is expressed as I = αV β , where α is a constant, V is the applied external voltage, and β is the exponent. In the low voltage region, the slope is about 1 indicating that ohmic conduction is dominant in the charge carrier transport.…”