Resistive random access memory and its applications in storage and nonvolatile logic

Zhu, Dibin; Li, Yang; Shen, Wensheng; Zhou, Zheng; Liu, Lifeng; Zhang, Xing

doi:10.1088/1674-4926/38/7/071002

Cited by 27 publications

(16 citation statements)

References 73 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The CF in oxygen vacancies filament-based RRAM 'OxRRAM' also known as valence change memory (VCM) is composed of oxygen vacancy defects, instead of metal atoms, due to anion migration within the storage material itself [96]. Although the switching mechanism of both 'OxR-RAM' and 'CBRAM' is discussed in detail, there is still some debate on the switching mechanisms of both the RRAM types [97]. For example, where the CF starts to grow in the set process and where to break in the reset process, and how these oxygen vacancies/metal atoms gather to form the CF.…”

Section: Resistive Switching Mechanismmentioning

confidence: 99%

Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications

2020

View full text Add to dashboard Cite

In this manuscript, recent progress in the area of resistive random access memory (RRAM) technology which is considered one of the most standout emerging memory technologies owing to its high speed, low cost, enhanced storage density, potential applications in various fields, and excellent scalability is comprehensively reviewed. First, a brief overview of the field of emerging memory technologies is provided. The material properties, resistance switching mechanism, and electrical characteristics of RRAM are discussed. Also, various issues such as endurance, retention, uniformity, and the effect of operating temperature and random telegraph noise (RTN) are elaborated. A discussion on multilevel cell (MLC) storage capability of RRAM, which is attractive for achieving increased storage density and low cost is presented. Different operation schemes to achieve reliable MLC operation along with their physical mechanisms have been provided. In addition, an elaborate description of switching methodologies and current voltage relationships for various popular RRAM models is covered in this work. The prospective applications of RRAM to various fields such as security, neuromorphic computing, and non-volatile logic systems are addressed briefly. The present review article concludes with the discussion on the challenges and future prospects of the RRAM.

show abstract

Section: Resistive Switching Mechanismmentioning

confidence: 99%

Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications

2020

View full text Add to dashboard Cite

show abstract

“…The modern system chip design of the IP core based on the nonvolatile storage circuit allows system designers to explore different system architectures. The application of the IP core makes the system architecture unnecessary to study each module in-depth [13]. This method effectively reduces the complexity of the problems encountered in the design process [14].…”

Section: Collect Nonvolatile Memory Based On Ecg Signalmentioning

confidence: 99%

A New Type of ECG Signal Acquisition and Storage Nonvolatile Chip Embedded in Mobile Devices for Sports Monitoring

Zhang

2022

Journal of Nanomaterials

View full text Add to dashboard Cite

In the fast-paced development of life in today’s society, the use of ECG signals is not only used in the medical direction to scan patients; portable ECG signal acquisition tools can collect and analyze the corresponding ECG signals in time and respond to the wearer in time, so that the user can make timely adjustments or seek medical treatment in time to avoid a malignant situation that occurs. For people in sports, the collection of ECG signals is more helpful to the arrangement and estimation of training conditions. Based on nonvolatile memory technology, data will not be lost when the computer is turned off or suddenly or unexpectedly shut down. This research puts forward the design of an antiexercise ECG monitoring system that collects ECG signals for a group that is in the process of exercise. Use mathematical calculation system to classify, and conduct in-depth analysis of the reasons for poor anti-interference ability, and use the original denoising algorithm calculation as the basis to adapt to the dynamic situation in the opposite situation to the normal ECG signal acquisition in the static state. The collection is modified from the original basis. This research proposes an improved scheme for multichannel acquisition. Chips of semiconductor memory devices based on nonvolatile memory are embedded in mobile devices for use. The experimental results in this paper show that the comparison experiment ratio of collecting ECG signals from the sixth, third, fourth, and fifth directions can effectively reduce the mean square error (MSE), and the error of channel 6 is directly from 0.1598. It is down to 0.00143. Several other items showed a significant decrease. It shows that the anti-interference ability of the ECG monitoring system can be further enhanced by increasing the number of collection terminals.

show abstract

“…Designing a high-density STT-RAM memory is the basis for building a large-capacity nonvolatile cache. is section mainly introduces the single-level cell (SLC) vs MLC structure, storage mechanism, and multivalue STT-RAM memory cell structure [16], briefly analyzes the shortcomings of the existing memory structure and ways to increase the storage density, and derives research on ternary STT-RAM with higher storage density.…”

Section: Nonvolatile Cache Of Ternary Stt-ram Based On Smart Sports D...mentioning

confidence: 99%

Sports Smart Data Writing Based on New-Type Semiconductor Nonvolatile Storage Mode

Guo¹

2022

Scientific Programming

View full text Add to dashboard Cite

The development of smart sports has just taken a new chapter. Based on the digital transformation in all aspects today, the data content of smart sports with a large number of branches is huge. However, the current storage system, an external storage disk, has not adapted to the computer’s increasingly high requirements for IO performance; DRAM- and SRAM-based memory and cache also face power consumption and capacity expansion problems; the storage system on the overall performance of the computer system constraints is increasingly prominent. Based on the data storage of smart sports for digital transformation, this article proposes a smart for the writing of sports data; a better cache method has been explored under the new semiconductor nonvolatile cache mode. The experimental results in this article show that by comparing single-value and dual-value STT-RAM (spin-torque transfer RAM) caches, the three-valued cache with hierarchical mapping of page swap design has a significant improvement in IPC performance under each test load, compared with single-value STT-RAM caches. Compared with the value type, the average performance has increased by 16%; the overall energy consumption including memory has been reduced by an average of 12.3%.

show abstract

Resistive random access memory and its applications in storage and nonvolatile logic

Cited by 27 publications

References 73 publications

Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications

Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications

A New Type of ECG Signal Acquisition and Storage Nonvolatile Chip Embedded in Mobile Devices for Sports Monitoring

Sports Smart Data Writing Based on New-Type Semiconductor Nonvolatile Storage Mode

Contact Info

Product

Resources

About