23rd IEEE VLSI Test Symposium (VTS'05)
DOI: 10.1109/vts.2005.72
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Resistive Bridge fault model evolution from conventional to ultra deep submicron

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Cited by 46 publications
(34 citation statements)
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“…Logic threshold voltage is defined as the gate input voltage at which the gate output voltage is equal to V dd 2 , while all other inputs of the gate are at non-controlling value(s) [11]. This calculation is necessary, since L th is needed for critical resistance calculation of a given fault-site and is calculated using BSIM4 transistor 1 Mobility varies due to variation in effective strain in a strained silicon process [6].…”
Section: Proposed Variation-aware Bridge Fault Modeling Techniquementioning
confidence: 99%
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“…Logic threshold voltage is defined as the gate input voltage at which the gate output voltage is equal to V dd 2 , while all other inputs of the gate are at non-controlling value(s) [11]. This calculation is necessary, since L th is needed for critical resistance calculation of a given fault-site and is calculated using BSIM4 transistor 1 Mobility varies due to variation in effective strain in a strained silicon process [6].…”
Section: Proposed Variation-aware Bridge Fault Modeling Techniquementioning
confidence: 99%
“…Resistive bridge fault (RBF) represents a major class of defects in deep-submicron (DSM) CMOS and have received increased attention on modeling and simulation [1]. Manufacturing test employs fault models for testing digital circuits, which are meant to emulate the physical behaviour of a defect at device level.…”
Section: Introductionmentioning
confidence: 99%
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