Resistance trace modeling and electromigration immortality criterion based on void growth saturation

Lamontagne, P.; Ney, D.; Doyen, L.; Petitprez, E.; Wouters, Y.

doi:10.1109/irps.2010.5488704

Cited by 5 publications

(3 citation statements)

References 7 publications

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“…Thus, to model the time constant of a signal line, we need to model its EM resistance curve. According to previous research, the resistance evolution curve of the metal line consists of 3 portions [7][8] [14] [15], shown in Fig. 4.…”

Section: Definitionmentioning

confidence: 99%

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Atomic flux divergence-based AC electromigration model for signal line reliability assessment

Guan

Marek-Sadowska

2015

2015 IEEE 65th Electronic Components and Technology Conference (ECTC)

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In this paper, we develop an AC electromigration (EM) model for signal lines manufactured with copper dual damascene process. For the first time, the healing factor of AC EM is quantitatively modeled. To measure EM reliability of interconnects considering timing margins we introduce AC EM functional lifetime. We also develop an atomic flux divergence (AFD)-based void growth model to explain the resistance curves of measured results and calculate the functional EM lifetime of AC signal lines without extracting parameters from experiments. We demonstrate fidelity of the proposed model with measured results for both the healing factor and the rate of resistance change.

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Section: Definitionmentioning

confidence: 99%

“…Therefore, the EM lifetime of such signal lines with AC EM should be decided by the resistance evolution curve of EM rather than the Black's equation. Existing physics papers [7][8] all report similar resistance evolution curves obtained from physical measurements but do not provide a theoretical model.…”

Section: Introductionmentioning

confidence: 99%

Atomic flux divergence-based AC electromigration model for signal line reliability assessment

Guan

Marek-Sadowska

2015

2015 IEEE 65th Electronic Components and Technology Conference (ECTC)

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“…Under electromigration (EM), the wire is affected by voids, which leads to an increased interconnect resistance or even open circuits [9]. The high temperature accelerates the void evolution [10,11] and leads to faster IC performance degradation, and as a consequence the circuit lifetime reduces. Therefore, the interconnects have to be sized considering the temperature increase to guarantee an adequate circuit operation for a longer period.…”

Section: Introductionmentioning

confidence: 99%

Numerical Simulation of the Temperature on the Metallization of an Integrated Circuit and its Impact on Interconnect Lifetime

Nunes

Bohorquez²,

Orio³

2020

JICS

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This paper demonstrates a finite element model to investigate the temperature change of the interconnects of an integrated circuit due to the power dissipation of the transistors in the substrate. The temperature of the local interconnect is more significantly affected, exhibiting an increase of 49 K and 34 K, for the Metal 1 and Metal 2, respectively. We discuss the impact of the temperature increase in the electromigration and, as a consequence in the lifetime of an operational amplifier, which demonstrates the importance of considering the metallization temperature distribution in the design stage.

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Electromigration induced void kinetics in Cu interconnects for advanced CMOS nodes

Arnaud

Lamontagne

Galand

et al. 2011

2011 International Reliability Physics Symposium

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Resistance trace modeling and electromigration immortality criterion based on void growth saturation

Cited by 5 publications

References 7 publications

Atomic flux divergence-based AC electromigration model for signal line reliability assessment

Atomic flux divergence-based AC electromigration model for signal line reliability assessment

Numerical Simulation of the Temperature on the Metallization of an Integrated Circuit and its Impact on Interconnect Lifetime

Electromigration induced void kinetics in Cu interconnects for advanced CMOS nodes

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