Atomic flux divergence-based AC electromigration model for signal line reliability assessment

Guan, Zhong; Marek-Sadowska, Malgorzata

doi:10.1109/ectc.2015.7159901

Cited by 3 publications

(1 citation statement)

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“…Jain et al emphasized the importance of considering EM reliability across the whole workflow from foundry fabrication up to a system design [38]. Guan and Marek-Sadowska [39] analyzed the EM effect on signal line reliability, which carries ac current, and proposed a theoretical model to quantify healing effect due to ac currents. Chen et al investigated the multibranch interconnects suffering from EM effect.…”

Section: Related Workmentioning

confidence: 99%

Alleviating Through-Silicon-Via Electromigration for 3-D Integrated Circuits Taking Advantage of Self-Healing Effect

Cheng

Todri‐Sanial

Yang

et al. 2016

IEEE Trans. VLSI Syst.

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Three-dimensional integration is considered to be a promising technology to tackle the global interconnect scaling problem for terascale integrated circuits (ICs). Three-dimensional ICs typically employ through-silicon-vias (TSVs) to vertically connect planar circuits. Due to its immature fabrication process, several defects, such as void, misalignment, and dust contamination, may be introduced. These defects can significantly increase current densities within TSVs and cause severe electromigration (EM) effects, which can degrade the reliability of 3-D ICs considerably. In this paper, we propose an effective framework to mitigate EM effect of the defective TSV. At first, we analyze various possible TSV defects and their impacts on EM reliability. Based on the observation that EM can be significantly alleviated by self-healing effect, we design an EM mitigation module to protect defective TSVs from EM. To guarantee EM mitigation efficiency, we propose two defective TSV protection schemes, i.e., neighbor sharing and global sharing. Experimental results show that the global-sharing scheme performs the best and can improve the EM mean time to failure by more than 70× on average with only 0.7% area overhead and less than 0.5% performance degradation compared with naked design without any EM protection.Index Terms-3-D integrated circuits (ICs), electro migration (EM), reliability, self-healing effect, throughsilicon-via (TSV).

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Section: Related Workmentioning

confidence: 99%